IRF7325 ,-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
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IRF7325
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 94094
International
TOR Rectifier IRF7325
HEXFET© Power MOSFET
o Trench Technology VDss RDS(on) max (mn) ID
. Ultra Low On-Resistance M 2V 24@Ves = -4.51/ $7.8A
. Dual P-Channel MOSFET
33@VGS = -2.5v 16.2A
. Low Profile (<1.8mm)
. Available in Tape & Reel 49@VGs = -1.81/ A3.9A
Description
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance 1 8
per silicon area. This benefit, combined with the Sl [CCE'- LIL D1
ruggedized device design that HEXFET Power G1 2 l 7331 D1
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use S2 ce'- ‘5311 D2
in a wide variety of applications. l
G2 4 53]: D2
The SO-8 has been modihed through a customized
leadframe for enhanced thermal characteristics and Top View SO-8
multiple-die capability making it ideal in a variety of
powerapplications. 1/Nhththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25''C Continuous Drain Current, Ves @ -4.5V -7.8
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -6.2 A
IDM Pulsed Drain Current co -39
Po @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70''C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
Vss Gate-to-Source Voltage , 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 62.5 °CNV
1
2/5/01
IRF7325
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.007 - Vl°C Reference to 25°C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 24 V63 = -4.5V, ID = -7.8A ©
- - 33 mn VGs = -2.5V, ID = -6.2A ©
- - 49 Vcs = -1.8V, ID = -3.9A ©
VGS(th) Gate Threshold Voltage -0.40 - -0.90 V Vos = VGS, ID = -250pA
gis Forward Transconductance 17 - - S Vos = -10V, ID = -7.8A
loss Drain-to-Source Leakage Current - - -1.0 y A VDs = -9.6V, VGS = 0V
- - -25 V93 = -9.6V, Vss = 0V, T: = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGs = 8.0V
Qg Total Gate Charge - 22 33 ID = -7.8A
Q95 Gate-to-Source Charge - 5.0 7.5 nC Vos = -6.01/
di Gate-to-Drain ("Miller") Charge - 4.7 7.0 VGS = -4.5V
tdmn) Turn-On Delay Time - 9.4 - ns N/oo = -6.0V
tr Rise Time - 9.8 - ID = -1.0A
tam) Turn-Off Delay Time - 240 - RD = 6.09
tf Fall Time - 180 - VGs = -4.5V ©
Ciss Input Capacitance - 2020 - VGs = 0V
COSS Output Capacitance - 520 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -39 p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 28 42 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle f 2%.
co When mounted on 1 inch square copper board.
