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IRF7314-IRF7314TR
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 9.14368
International
ISQR Rectifier PRELIMINARY IRF731 4
HEXFET® Power MOSFET
o GenerationVTechnology
o Ultra Low On-Resistance Sl 'rlrl- 833: D1
o Dual P-Channel MOSFET @1512 -_ri-li,',C,],)o,1, VDSS = -20V
0 Surface Mount 3 6
0 Fully Avalanche Rated S2 LIL"- l LLL) D2
G2 D14 SEED 02 RDS(on) = 0.0589
Top View
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and S0-8
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vros -20 V
Gate-Source Voltage VGS i 12
T =25°C -5.3
. D . tS A
Continuous ram Curren TA--- 70°C lo -4.3 A
Pulsed Drain Current IBM -21
Continuous Source Current (Diode Conduction) ls -2.5
Maximum Power Dissipation s :2: 3303 Po 1.: W
Single Pulse Avalanche Energy EPs 150 mJ
Avalanche Current IAR -2.9 A
Repetitive Avalanche Energy EAR 0.20 ntl
Peak Diode Recovery dv/dt© dv/dt -5.0 V/ ns
Junction and Storage Temperature Range T o,TSTG -55 to + 150 (
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient© Rem 62.5 'CM/
11/18/97
IRF7314 International
TGR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.031 - V/°C Reference to 25°C, ID = -ImA
RDS(on) Static Drain-to-Source On-Resistance - 0049 0.058 Q VGS = ASN, ID = -2.9A ©
- 0.082 0.098 VGS = -2.7V, ID = -1.5A ©
VGS(th) Gate Threshold Voltage -0.70 - - V Ws = VGs, ID = -250pA
gfs Forward Transconductance - 5.9 - S Ws = -10V, ID = -1.5A
loss Drain-to-Source Leakage Current _- _- Cd p A V: =" 112$ 5:: =13; Tu = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - -100 I/ss = 12V
q, Total Gate Charge - 19 29 ID = -2.9A
Qgs Gate-to-Source Charge - 4.0 6.1 nC Ws = -16V
di Gate-to-Drain ("Miller") Charge - 7.7 12 I/ss = -4.5V, See Fig. 10 (4)
td(on) Turn-On Delay Time - 15 22 VDD = -10V
tr Rise Time - 40 60 ns ID = -2.9A
tdm) Turn-Off Delay Time - 42 63 Rs = 6.0n
tf FallTime - 49 73 RD = 3.49 (9
Ciss Input Capacitance - 780 - l/ss = 0V
Coss Output Capacitance - 470 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -21 p-n junction diode. S
VSD Diode Forward Voltage - -0.78 -1.0 V T: = 25°C, Is = -2.9A, VGS = 0V ©
trr Reverse Recovery Time - 47 71 ns TJ = 25°C, IF = -2.9A
er Reverse RecoveryCharge - 49 73 nC di/dt = 100A/ps ©
Notes:
co Repetltive _rating; pulse width limited by © J-SD g -2.9A, di/dt g -77A/ps, VDD g V(BR)DSSa
max. junction temperature. ( See fig. 11 ) TJ f 150°C
© Starting Tu = 25°C, L = 35mH © Pulse width 3 300ps; duty cycle 3 2%.
RG = 259, IAS = -2.9A.
(S) Surface mounted on FR-4 board, ts 10sec.
