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IRF7311IRN/a1615avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7311TRIORN/a16696avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7311-IRF7311TR
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 91435C
International
Tart, Rectifier IRF73rl
HEXFET© Power MOSFET
0 Generation V Technology
0 Ultra Low On-Resistance Sl L; 84091
. Dual N-Channel MOSFET G112 1 733m VDSS = 20V
0 Surface Mount 3 a
. Fully Avalanche Rated S2 IT l E D2
G2 14 511302 RDS(on) = 0.029n
Top View
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modiMd through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple S O -8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos 20 V
Gate-Source Voltage VGS i 12
Continuous Drain Currents TA = 25 C k, 6.6
TA = 70°C 5.3 A
Pulsed Drain Current G, 26
Continuous Source Current (Diode Conduction) ls 2.5
. . . . TA = 25°C 2.0
Maximum Power Dissipation s TA = 70°C PD 1.3 W
Single Pulse Avalanche Energy © EAS 100 mJ
Avalanche Current IAR 4.1 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 V/ ns
Junction and Storage Temperature Range T J,TSTG -55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient]) RQJA 62.5 ''C/W
5/29/01

IRF73rl International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.027 - Vl°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 0.023 0.029 Q VGS = 4.5V, ID = 6.0A ©
- 0.030 0.046 Ves = 2.7V, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 0.7 - - V Vros = I/ss, ID = 250pA
gfs Forward Transconductance - 20 - S VDs = 10V, ID = 6.0A
bss Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, Vss = 0V D
- - 5.0 Vos = 16V, VGS = 0V, TJ = 55 C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -121/
09 Total Gate Charge - 18 27 ID = 6.0A
Qgs Gate-to-Source Charge - 2.2 3.3 no Vos = 10V
di Gate-to-Drain ("Miller") Charge - 6.2 9.3 N/ss = 4.5V, See Fig. 10 ©
tam) Turn-On Delay Time - 8.1 12 VDD = 10V
tr Rise Time - 17 25 ns ID = 1.0A
tam) Turn-Off Delay Time - 38 57 Rs = 6.on
tr Fall Time - 31 47 RD = lon ©
Ciss Input Capacitance - 900 - VGS = 0V
Coss Output Capacitance - 430 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 26 p-n junction diode. s
va, Diode Forward Voltage - 0.72 1.0 V T: = 25''C, Is = 1.7A, VGS = 0V ©
trr Reverse Recovery Time - 52 77 ns T: = 25''C, IF = 1.7A
Qrr Reverse RecoveryCharge - 58 86 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © '50 f 4.1A, di/dt f 92A/ps, VDD g V(BR)DSSI
max. junction temperature. ( See fig. 11 ) To f 150°C
© Starting T: = 25°C, L = 12mH © Pulse width S 300ps; duty cycle 5 2%.
Rs-- 259!'AS = 4.1A.
(S) Surface mounted on 1 in square Cu board

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