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IRF730PBFIRN/a481avai400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRF730PBF
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.308K
msernatioka,
1:212 Rectifier _ IRF730
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
'0 Repetitive Avalanche Rated
0 Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
VDSS = 400V
RDS(on) = 1.09
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and tow package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, I/ss (tl) 10 V 5.5
In © To = 100°C Continuous Drain Current, Ves @ 10 V 3.5 A
low: Pulsed Drain Current C) 22
Po a To = 25°C Power Dissipation 74 W
Linear Derating Factor 0.59 W/°C
I/ss Gate-to-Source Voltage 4:20 V
EAS Single Pulse Avalanche Energy © . 290 md
lAFl Avalanche Current C) 5.5 A
EAR Repetitive Avalanche Energy C) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
Tu Operating Junction and -55 to +150
Tsm Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo _ _ Junction-to-Case - - 1.7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Rsm Junction-to-Ambient . - - _ 62
IFlF730
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(en)oss Drain-to-Source Breakdown Voltage 400 - - V l/ss-HN, ID: 25tNA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.54 - VPC Reference to 25°C, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.0 Q VGs=10V, lo=3.3A G)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vros=Vss, Io: 250PA
gfs Forward Transconductance 2.9 - - S Vos=50V, 19:3.3A ©
loss Drain-to-Source Leakage Current - .. 25 WA Vrxr-c400V, VGS=0V
- - 250 VDs=320V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO VGs=-2OV
ch Total Gate Charge - - 38 ID=3.5A
Qgs Gate-to-Source Charge - - 5.7 no Vos=320V
di Gate-to-Drain ("Miller") Charge - - 22 Ves=10V See Fig. 6 and 13 Co
tdgon) Turn-On Delay Time - 10 - VDD=200V
t, Rise Time - 15 -_, ns |o=3.5A
tam Turn-Off Delay Time - 38 - Re=12s2
tt Fall Time - 14 - Flrr=57n Seé Figure 10 C4)
LD internal Drain Inductance - 4.5 - 'tit,",i7lsti)f.') D
nH from package GE
Ls Internal Source Inductance - 7.5 -- and center Of (ii)
die contact 3
Ciss Input Capacitance - 700 - VGs=0V _
Coss Output Capacitance - 170 - pF Vos-HSV
Cd, Reverse Transfer Capacitance - 64 - J=1.0MHz' See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 5 5 MOSFET" symbol D
(Body Diode) ' A showing the [iii'
ISM Pulsed Source Current - - 22 integral reverse G tr,
(Body Diode) co p-n Junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, Is=5.5A, I/ss-HN ©
tn Reverse Recovery Time - 270 530 ns TJ=25°C. IF=3.5A
Qrr Reverse Recovery Charge - 1.8 2.2 uC di/dt=100/Ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+Lo)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25oC), L=16mH
RG=25Q, fAS=5.5A (See Figure 12)
© ISD£5.5A, di/de90A/gs, VDDSV(BR)DSS,
Tel 50°C
© Pulse width 3 300 us; duty cycle 52%.
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