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IRF730ALPBFIRN/a3500avai400V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF730ASIRN/a15950avai400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF730ASPBFIRN/a3200avai400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF730AS ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400 ..
IRF730ASPBF ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400 ..
IRF730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRF730PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.308K IRF730 Intematiqhal TOR Rectifier HEXFETO Power MOSFET . Dynamic dv/dt Ratin ..
IRF730S ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.1009 International Rectifier IRF73OS HEXFETO Power MOSFET Surface Mount Available ..
IRF730STRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and can dissipate up to 2.0W in a t ..
ISD2532S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2540S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2560G , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560GI , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations


IRF730ALPBF-IRF730AS-IRF730ASPBF
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD-93772A
International
TOR Rectifier SMPS MOSFET IRF730AS/L
HEXFET© Power MOSFET
Applications
. Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID
o Uninterruptable Power Supply 400V 1.09 5.5A
0 High speed power switching
Benefits
a Low Gate Charge Clg results in Simple
Drive Requirement
o Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current D Pak TO 262
o Effective Coss Specified (See AN1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 5.5
ID @ Tc = 100°C Continuous Drain Current, VGS © 10V© 3.5 A
IDM Pulsed Drain Current coco 22
PD @Tc = 25°C Power Dissipation 74 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt ©© 4.6 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies:
0 Single Transistor Flyback Xfmr. Reset
o Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Notes OD through © are on page 10
1
5/8/00
IRF730AS/L International
Static @ T J = 25°C (unless otherwise specified) IOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V N/ss = 0V, ID = 250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.5 - V/°C Reference to 25°C, ID = 1mA ©
RDs(on) Static Drain-to-Source On-Resistance - - 1.0 Q l/ss = 10V, ID = 3.3A G)
Vegan) Gate Threshold Voltage 2.0 - 4.5 V Vos = Veg, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 400V, VGS = 0V
- - 250 Vos = 320V, VGS = 0V, TJ = 125°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 3.1 - - S Vos = 50V, ID = 3.3A©
Qg Total Gate Charge - - 22 ID = 3.5A
Qgs Gate-to-Source Charge - - 5.8 nC Vros = 320V
di Gate-to-Drain ("Miller") Charge - - 9.3 VGS = 10V, See Fig. 6 and 13 ©©
tdmn) Turn-On Delay Time -r_-- IO - VDD = 200V
tr Rise Time - 22 - ns ID = 3.5A
tam) Turn-Off Delay Time - 20 - Rs = 12n
tr Fall Time - 16 - Ro = 57Q,See Fig. 10 @©
Ciss Input Capacitance - 600 - VGS = 0V
Coss Output Capacitance - 103 - Vos = 25V
Crss Reverse Transfer Capacitance - 4.0 - pF f = 1.0MHz, See Fig. 5©
Coss Output Capacitance - 890 - VGS = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 30 - Vss = 0V, I/os = 320V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 45 - VGs = 0V, Vos = 0V to 320V ©©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 290 mJ
IAR Avalanche CurrentC0 - 5.5 A
EAR Repetitive Avalanche Energy®© - 7.4 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1.7 °C/W
ReJA Junction-to-Ambient ( PCB Mounted, steady-state)' - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 5 5 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 22 integral reverse G
(Body Diode) C) - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 5.5A, Ves = 0V ©
trr Reverse Recovery Time - 370 550 ns T J = 25°C, IF = 3.5A
Qrr Reverse RecoveryCharge - 1.6 2.4 pC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
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