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IRF720PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
PD-9.315J
IfRF720
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. Surface Mount
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ISD1020AP , Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
ISD1110P , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1110S , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1210S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
IRF7207TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRIectifier
Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFETpowerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
PD - 95166
llRF7207PbF
HEXFET6 Power MOSFET
SDI - 5 D
SEE 7:11] D VDSS = -20V
E CLE]
s BI lm, D
G [IE lm D RDS(on) = 0.069
Top View
powerapplications. Withthese improvements, multiple SO-8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ Tc = 25°C Continuous Drain Current, Vss @ -4.5V -5.4
ID @ To = 70°C Continuous Drain Current, Ves @ -4.5V -4.3 A
IDM Pulsed Drain Current (D -43
PD ©Tc = 25°C Power Dissipation 2.5
PD @TC = 70°C Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
Ves Gate-to-Source Voltage i 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps -16 V
EAS Single Pulse Avalanche Energy© 140
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient® - 50 °CNV
1
10/6/04
IRF7207PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnpss Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 41011 - V/°C Reference to 25°C, ID = -1mA
RDSM) Static Drain-to-Source On-Resistance - - 0.06 Q VGS = -4.5V, ID = -5.4A ©
- - 0.10 Vas = -2.7v, ID = -2.7A ©
VGS(th) GateThreshold Voltage -0.7 - - V Vos = Vas, ID = -250pA
gfs Forward Transconductance 8.3 - - S Vos = -10V, lo = -5.4A
IDSS Drain-to-Source Leakage Current - - -1.0 PA Ihos = -16V, l/cis = 0V
- - -25 V93 = -16V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = 12V
Gate-to-Source Reverse Leakage - - 100 Vas = -12V
Qg Total Gate Charge - 15 22 ID = -5.4A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 5.7 8.6 VGS = -4.5V, 6)
tdwn) Turn-On Delay Time - 11 - VDD = -10V
tr Rise Time - 24 - ns ID = -1.0A
td(oti) Turn-Off Delay Time - 43 - Re = 6.09.
tt Fall Time - 41 - RD =10S2, ©
Ciss Input Capacitance - 780 - Vas = 0V
Cass Output Capacitance - 410 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz,
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -3.1 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -43 p-n junction diode. s
Vso Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -3.1A, l/tss = 0V ©
trr Reverse Recovery Time - 42 63 ns Tu = 25°C, IF = -8.1A
Qrr Reverse RecoveryCharge - 50 75 nC di/dt = -100A/ps ©
Notes:
C) Repetitive .ratin.g; pulse width limited by G) ISDS -5.4A, di/dt s: -79A/ps, VDD s V(BR)r)ss,
max. junction temperature. To 3 150°C
© Starting Tu = 25''C, L = 9.6mH GD Pulse width 5 300ps; duty cycle S 2%.
Rs = 259, IAS = -5.4A.
(9 When mounted on 1 inch square copper board, t<10 sec
2
