IC Phoenix
 
Home ›  II26 > IRF7101TRPBF-IRF7101TRPBF.,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF-IRF7101TRPBF. Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7101TRPBFIRN/a4000avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBFIORN/a180000avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF. |IRF7101TRPBFIRN/a79340avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7101TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF. ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7103 ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1095BIRF7103®HEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-ResistanceS1 ..
IRF7103Q ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplications®

IRF7101TRPBF-IRF7101TRPBF.
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Adavanced Process Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
PD - 95162
lRFT101PbF
HEXFET® Power MOSFET
SInL'- l 540 D1 VDSS = 20V
G113]: 733101
S2 CIE"- l , 6II: D2 RDS(0n) = 0.10Q
G2 El]: 5-IrIn D2
Top View ID = 3.5A
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 3.5
ID © TA = 100°C Continuous Drain Current, Vss @ 10V 2.3 A
IDM Pulsed Drain Current oo 14
Pro @Tc = 25''C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Ves Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © 3.0 V/nS
Tu, Tsms Junction and Storage Temperature Range -55 to + 150 o
Sodering Temperature, for 10 seconds 300(1.6mm from case) C
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ROUA Maximum Junction-to-Ambient © - - 62.5 °C/W
10/6/04

|RF7101PbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Vcs = 0V, ID = 250pA
AV(BR)ross/ATO Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.10 Q l/cs = lov, ID = IBA ©
- - 0.15 VGs = 4.5V, ID = 1.0A ©
Vesah) Gate Threshold Voltage 1.0 - 3.0 V Vros = VGs, ID = 250pA
git Forward Transconductance 1.1 - - S Vros = 15V, ID = 3.5A ©
. - - 2.0 VDS = 20V, VGS = ov
I Drain-to-Source Leaka e Current A
ces g - - 250 p l/ns = 16V, VGS = 0V, Tu = 125 "C
ds Gate-to-Source Forward Leakage - - 100 n A Vcs = 12V
Gate-to-Source Reverse Leakage - - -100 VGs = - 12V
Qs; Total Gate Charge - - 15 ID = 1.8A
Qgs Gate-to-Source Charge - - 2.0 nC Vros = 16V
di Gate-to-Drain ("Miller") Charge - - 3.6 Vss = 10V
tdm) Turn-On Delay Time - 7.0 - VDD = 10V
tr Rise Time - 1O - ns ID = 1.8A
tam) Turn-Off Delay Time - 24 - RG = 8.29
k Fall Time - 3O - RD = 269
Lo Internal Drain Inductance - 4.0 - _ D
nH Between lead,6mm(0.25ln.) E )
f k d t G
Ls Internal Source Inductance - 6.0 - CT. pac age an cen er 4
of die contact s
Ciss Input Capacitance - 320 - Vcs = 0V
Cass Output Capacitance - 250 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 75 - l = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 O MOSFETsymboI D
(Body Diode) - - . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 14 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, Is = 1.7A, Vss = 0V ©
trr Reverse Recovery Time - 36 54 ns Tu = 25''C, IF = 1 .7A
Qrr Reverse RecoveryCharge - 41 62 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature,
© Iso S 3.5A, di/dt f 90A/ps, VDD S V(BR)DSSI
TJs 150°C

© Pulse width s: 300psi duty cycle S 2%.
(9 Surface mounted on FR-4 board, t S 10sec.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED