IC Phoenix
 
Home ›  II26 > IRF7101-IRF7101TR,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101-IRF7101TR Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7101IRFN/a600000avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRIORN/a675avai20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7101 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.871BIRF7101®HEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-ResistanceS1 ..
IRF7101TR ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.871BIRF7101®HEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-ResistanceS1 ..
IRF7101TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7101TRPBF. ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7103 ,50V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1095BIRF7103®HEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-ResistanceS1 ..
IS89C52-40W , CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8-Kbytes of FLASH
IS93C46-3GR , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3GRL , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3GRLI , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3P , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3PI , 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM


IRF7101-IRF7101TR
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
PD - 9.871 B
IRF7101
HEXFET© Power MOSFET
o Adavanced Process Technology
0 Ultra Low On-Resistance slr-uc"- ULm V = 20V
o Dual N-Channel MOSFET G1 |_sz l 71m DSS
o Surface Mount ILL UL
o Available in Tape & Reel S2 D2 RDS(on) = 0-109
0 Dynamic dv/dt Rating G2 I ll 5 ll D2
0 Fast Switching To View ID=3.5A
Description p
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA--- 25°C Continuous Drain Current, Ves @ 10V 3.5
ID @ L-- 100°C Continuous Drain Current, VGS @ 10V 2.3 A
IDM Pulsed Drain Current C) 14
PD @Tc = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGs Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recoverydv/dt© 3.0 V/nS
To, TSTG Junction and StorageTemperature Range -55 to + 150 o
Sodering Temperature, for 10 seconds 300(1.6mm from case) C
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ReJA Maximum Junction-to-Ambient G) - - 62.5 "CAN
8/25/97

IRF7101
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V N/ss = 0V, ID = 250PA
AV(BR)[,SS/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.10 Q VGS = 10V, ID = 1.8A ©
- - 0.15 VGs = 4.5V, ID =1.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = VGs, ID = 250PA
gfs Forward Transconductance 1.1 - - S VDs = 15V, ID = 3.5A ©
I Drain-to-Source Leaka e Current - - 2.0 PA I/ras = 20V, I/ss = 0V
DSS g - - 250 VDS = 16V, VGS = 0v, Tu = 125 ''C
less Gate-to-Source Forward Leakage - - 100 nA l/cs = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = - 12V
% Total Gate Charge - - 15 ID = 1.8A
Qgs Gate-to-Source Charge - - 2.0 nC VDS = 16V
di Gate-to-Drain ("Miller") Charge - - 3.6 N/ss = 10V
ki(on) Turn-On Delay Time - 7.0 - VDD = 10V
tr Rise Time - 10 - ns ID = 1.8A
td(off) Turn-Off Delay Time - 24 - Rs = 8.29
tf Fall Time - 30 - RD = 269
L0 Internal Drain Inductance - 4.0 - Between Iead,6mm(0.25in.) {0
nH from package and center G )
LS Internal Source Inductance - 6.0 - .
of die contact s
Ciss Input Capacitance - 320 - I/ss = 0V
Coss Output Capacitance - 250 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 75 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 0 MOSFET symbol D
(Body Diode) . A showing the Hi:
ISM Pulsed Source Current integral reverse G E
(Body Diode) co - - 14 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, ls = 1.7A, VGS = 0V ©
trr Reverse Recovery Time - 36 54 ns Tu = 25°C, IF = 1.7A
er Reverse RecoveryCharge - 41 62 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width f 300psi duty cycle f 2%.
© ISD s 3.5A, di/dt s 90A/ps, V00 3 V(BR)DSSa © Surface mounted on FR-4 board, ts 10sec.
TJs150°C

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED