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IRF6714MTRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance.
PD - 96130A
International IRF6714MPbF
TOR Rectifier IRF6714W%PbF
DirectFETTM Power MOSFET Q)
0 RoHs Compliant and Halogen Free CD Typical values (unless otherwise specified)
q Low Profile (<0.6 mm) Voss Vas RDS(on) RDS(on)
q Dual Sided Cooling Compatible C)
. Ultra Low Package In ductance 25V max t20V max 1.6mQ© 10V 2.6mQ© 4.5V
q Optimized for High Frequency Switching CD 09 tot di Ass er Qoss Vgs(th)
q Ideal for CPU Core DC-DC Converters
0 Optimized for Sync. FET socket of Sync. Buck ConverterCD 29nC 8.3nC 4.1nC 36nC 23nC 1.9V
0 Low Conduction and Switching Losses
q Compatible with existing Surface Mount Techniques C)
o 100% Rg tested
MX DirectFETm ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMQIIIEEIMTIMPI ll
Description
The IRF6714MPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
l/rs Drain-to-Source Voltage 25 V
l/ss Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Ves © 10V co 29
ID © T, = 70°C Continuous Drain Current, Vss @ 10V co 23 A
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V © 166
IDM Pulsed Drain Current s 234
EAS Single Pulse Avalanche Energy 175 mJ
lAn Avalanche Current 23 A
5 "it.
6 4 S,
CC., >
fii.. 3 B
tr 2 ,
2 4 6 8 10 12 14 16 18 20 O 10 20 30 4O 5O 60 70 80
VGS Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. B) Tc measured with thermocouple mounted totop (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.651mH, Rs = 259, IAS = 23A.
1
04/29/09
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lRF6714MPbF
International
TO.R Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 18 - mV/°C Reference to 2trC, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.6 2.1 m9 Vas = 10V, ID = 29A ©
2.6 3.4 Vai; = 4.5V, ID = 23A C)
l/sam) Gate Threshold Voltage 1.4 1.9 2.4 V VDs = Vss, '0 = 1 00p A
AVGSmn/ATJ Gate Threshold Voltage Coefficient - -6.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 VDs = 20V, Vss = 0V
- - 150 pA vDS = 20v, l/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 122 - - S Vos = 13V, ID = 23A
q, Total Gate Charge - 29 44
0951 Pre-Vth Gate-to-Source Charge - 9.0 - VDs = 13V
0952 Post-Vth Gate-to-Source Charge - 4.1 - n C l/ss = 4.5V
di Gate-to-Drain Charge - 8.3 - ID = 23A
0900., Gate Charge Overdrive - 8.1 - See Fig. 15
st Switch Charge (Qgsz + di) - 12 -
Qoss Output Charge - 23 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.2 2.2 Q
tum) Turn-On Delay Time - 18 _ VDD = 13V, I/ss = 4.5V ©
t, Rise Time - 26 - ns ID = 23A
tam) Turn-Off Delay Time - 13 - Ra = 1.89, RD = 0.549
t, Fall Time - 9.6 - See Fig. 17
Ciss Input Capacitance - 3890 - Ves = 0V
cu, Output Capacitance - 1110 - pF Vos = 13V
Crss Reverse Transfer Capacitance - 490 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
- - 112 .
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 234 integral reverse G E
(Body Diode) © p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 23A, Vss = 0V ©
tr, Reverse Recovery Time - 26 39 ns Tu = 25°C, IF = 23A
Q,, Reverse Recovery Charge - 36 54 nC di/dt = 200A/ps ©
Notes:
CO Pulse width S 400ps; duty cycle S 2%
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