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IRF6713STRPBFIRN/a17800avaiA 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance.


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IRF6713STRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance.
PD - 96129A
International llRF6713SPbF
TOR Rectifier lRF6713STRPbF
DirectFETTM Power MOSFET Q)
Typical values (unless otherwise specified)
o RoHS Compliant Containing No Lead and Bromide C) V V R R
. Low Profile (q Dual Sided Cooling Compatible OD 25V max t201/ max 2.2mQ@ 10V 3.5m§2@ 4.5V
q Ultra Low Package Inductance A tot di tus on tu, Vgs(th)
q Optimized for High Frequency Switching co 21nC 6.3nC 2.7nC 18nC 14nC 1.9V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for both Sync.FET and some Control FET "s,
application(0 [to-i-iT-j dt ' '
0 Low Conduction and Switching Losses G lt1Ar s "R,Y .
D D x.
q Compatible with existing Surface MountTechniques (D k "
o 100% Rg tested DirectFETw ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
lgmlsxlsTl |MQ|MX|MT|MP| ll
Description
The IRF6713SPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MlCRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The FF6713SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6713SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 25 V
Vos Gate-to-Source Voltage t20
ID @ Ta = 25°C Continuous Drain Current, l/ss @ 10V © 22
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V (3 17 A
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V © 95
IBM Pulsed Drain Current Cs) 170
EAS Single Pulse Avalanche Energy © 34 mJ
IAR Avalanche Current C9 17 A
5 fe'.". 6.0 I
I = 22A 0 I = 17A
Ci" ( \ D g' 5.0 -'D="-'"vrjs-- 20V
E 4 = I = \<
:1 , g 4 0 VD'S 13 r /
g "ss, T J = 125°C 8 . ///
iif 3 's 3 0
E "s.., li,'' 2.0
- TJ = 25 C o 1.0
1 J 0.0
2 4 6 8 1O 12 14 16 0 IO 20 30
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. B) Tc measured with thermocouple mounted totop (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.23mH, Rs = 25f2, 'As = 17A.
www.iri.com 1
08/19/08

IRF671
International
TO.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 19 - mV/°C Reference to 25°C, '0 = 1mA
R030") Static Drain-to-Source On-Resistance - 2.2 3.0 mo Vss = IOM, ID = 22A ©
- 3.5 4.6 Vss = 4.5V, ID = 17A C)
VGSW Gate Threshold Voltage 1.4 1.9 2.4 v Vos = Vss, ID = 50pA
AVGSUh/ATJ Gate Threshold Voltage Coefficient - -6.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vrss = 20V, Vss = 0V
- _ 150 Vos = 20v, Vas = OV, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -201/
gfs Forward Transconductance 52 - - S Vos = 13V, b = 17A
as, Total Gate Charge - 21 32
0931 Pre-Vth Gate-to-Source Charge - 5.9 - Vos = 13V
0952 Post-l/th Gate-to-Source Charge - 2.7 - nC Vss = 4.5V
di Gate-to-Drain Charge - 6.3 - ID = 17A
ngd, Gate Charge Overdrive - 6.1 - See Fig. 15
st Switch Charge (Qgs2 + di) - 9.0 -
Qoss Output Charge - 14 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 0.40 0.60 Q
ton) Turn-On Delay Time - 12 - VDD = 13V, Vas = 4.5V ©
t, Rise Time - 13 - ns '0 = 17A
ton Turn-Off Delay Time - 9.2 - Rs = 1.89
ti Fall Time - 6.0 - See Fig. 17
Ciss Input Capacitance - 2880 - VGs = 0V
cu, Output Capacitance - 710 - pF Vos = 13V
Crss Reverse Transfer Capacitance - 340 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 54 MOSFET symbol D
(Body Diode) A showing the if
lu, Pulsed Source Current - - 170 integral reverse G c,
(Body Diode) S p-n junction diode. fl
VSD Diode Forward Voltage - 0.80 1.0 V Tu = 25°C, ls = 17A, Vas = 0V C)
t,, Reverse Recovery Time - 20 30 ns Tu = 25°C, IF = 17A
0,, Reverse Recovery Charge - 18 27 nC di/dt = 200A/ps ©
Notes:
CO Pulse width f 400ps; duty cycle S 2%.


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