IRF6710S2TRPBF Fast Delivery |IC PHOENIX CO.,LIMITED

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IRF6710S2TRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance.
IRF6710S2TRPbF
IRF6710S2TR1PbF
DirectFETPower MOSFET
Applicable DirectFET Outline and Substrate Outline
 
DirectFET ISOMETRIC
RoHS Compliant Containing No Lead and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques
100% Rg tested
Description
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Fig 1. Typical On-Resistance vs. Gate VoltageFig 2. Typical Total Gate Charge vs Gate-to-Source Voltage4812162024G Total Gate Charge (nC)
, G
ltaDS= 20V
VDS= 13VD= 10Ag totQgd Qgs2 Qrr Qoss Vgs(th)
8.8nC3.0nC1.3nC8.0nC4.4nC1.8V
2.04.06.08.010.012.014.016.018.0GS, Gate-to-Source Voltage (V)
l R
) (mJ = 25°CJ = 125°CD = 12A
Absolute Maximum Ratings
ParameterUnits
VDSDrain-to-Source VoltageV
VGSGate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°CContinuous Drain Current, VGS @ 10V A
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V
IDMPulsed Drain Current
EASSingle Pulse Avalanche Energy mJ
IARAvalanche CurrentA
Max.
±20
VDSSVGSRDS(on) RDS(on)
25V max±20V max4.5mΩ@ 10V9.0mΩ@ 4.5VS2SBM2 M4L4L6L8

Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Static @ TJ = 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units
BVDSSDrain-to-Source Breakdown Voltage25––––––V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient–––17–––mV/°C
RDS(on)Static Drain-to-Source On-Resistance–––4.55.9mΩ
VGS(th)Gate Threshold Voltage1.41.82.4V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient–––-7.0–––mV/°C
IDSSDrain-to-Source Leakage Current––––––1.0µA
IGSSGate-to-Source Forward Leakage––––––100nA
Gate-to-Source Reverse Leakage––––––-100
gfsForward Transconductance21––––––STotal Gate Charge –––8.813
Qgs1Pre-Vth Gate-to-Source Charge–––2.3–––
Qgs2Post-Vth Gate-to-Source Charge–––1.3–––nC
QgdGate-to-Drain Charge–––3.0–––
QgodrGate Charge Overdrive–––2.2–––See Fig. 15
QswSwitch Charge (Qgs2 + Qgd)–––4.3–––
QossOutput Charge–––4.4–––nCGate Resistance–––0.3Ω
td(on)Turn-On Delay Time–––7.9–––Rise Time–––20–––
td(off)Turn-Off Delay Time–––5.2–––nsFall Time–––6.0–––
CissInput Capacitance–––1190–––
CossOutput Capacitance–––320–––pF
CrssReverse Transfer Capacitance–––150–––
Diode Characteristics
ParameterMin.Typ.Max.UnitsContinuous Source Current ––––––19
(Body Diode)A
ISMPulsed Source Current––––––100
(Body Diode)
VSDDiode Forward Voltage––––––1.0V
trrReverse Recovery Time–––1421ns
QrrReverse Recovery Charge–––8.012nC
MOSFET symbol
RG= 6.2Ω
VDS = 15V, ID =10A
Conditions
ƒ = 1.0MHz
VDS = 10V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 20V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VDS = VGS, ID = 25µA
TJ = 25°C, IF =10A
VGS = 4.5V
ID = 10A
VGS = 0V
VDS = 13V
ID = 10A
VDD = 13V, VGS = 4.5V
di/dt = 200A/µs
TJ = 25°C, IS = 10A, VGS = 0V
showing the
integral reverse
p-n junction diode.

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-0061E-0050.00010.0010.010.11101001 , Rectangular Pulse Duration (sec)
l R
th0.20
D = 0.50
SINGLE PULSE
( THERMAL RESPONSE )Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)τι (sec)
21.7603237.2τJτ1τ2τ3τ3R1R2R2R3R3τC
Ci= τi/RiCi= τi/Ri
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Absolute Maximum Ratings
ParameterUnits
PD @TA = 25°CPower Dissipation W
PD @TA = 70°CPower Dissipation
PD @TC = 25°CPower Dissipation
TP Peak Soldering Temperature°C
TJ Operating Junction and
TSTGStorage Temperature Range
Thermal Resistance
ParameterTyp.Max.Units
RθJA Junction-to-Ambient –––82
RθJA Junction-to-Ambient 12.5–––
RθJA Junction-to-Ambient 20–––°C/W
RθJC Junction-to-Case –––9.8
RθJ-PCB Junction-to-PCB Mounted1.0–––
Linear Derating Factor W/°C0.012
-55 to + 175
Max.
1.3

Fig 5. Typical Output CharacteristicsFig 4. Typical Output Characteristics
Fig 6. Typical Transfer CharacteristicsFig 7. Normalized On-Resistance vs. Temperature
-60-40-20020406080100120140160180J , Junction Temperature (°C)
l R
lizD = 12AGS = 10V
VGS = 4.5V10100
, C
ita
VGS = 0V, f = 1 MHZiss = Cgs + Cgd, Cds SHORTEDrss = Cgd oss = Cds + Cgdossrssiss
0.1110100DS, Drain-to-Source Voltage (V)
-to
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1110100DS, Drain-to-Source Voltage (V)
, D
t (
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM2.5V
≤60µs PULSE WIDTH
Tj = 175°C
2.5V
1.52.02.53.03.54.04.55.0GS, Gate-to-Source Voltage (V)
t (
TJ = 175°C
TJ = 25°C
TJ = -40°CDS = 15V
≤60µs PULSE WIDTH20406080100J = 25°CVgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V

Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward VoltageFig 11. Maximum Safe Operating Area5075100125150175C , Case Temperature (°C)
t (
-75-50-250255075100125150175J , Temperature ( °C )
th
ltaD = 1.0AD = 1.0mAD = 250µAD = 25µA
0.20.40.60.81.01.2SD, Source-to-Drain Voltage (V)
, R
ver
e D
n C
rentGS = 0VJ = 175°CJ = 25°CJ = -40°C
0.00.11.010.0100.0DS , Drain-toSource Voltage (V)
(AA = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec5075100125150175
ID
TOP 1.8A
3.8A
BOTTOM 10A20406080100120140
fs,
d T
ansconduct
ance (J = 25°CJ = 175°CDS = 10V
380µs PULSE WIDTH

Fig 16. Typical Avalanche Current Vs.Pulsewidth
Fig 17. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at )
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) =T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-01
tav (sec)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)5075100125150175
Starting TJ , Junction Temperature (°C)
TOP Single Pulse
BOTTOM 1% Duty CycleD = 10A

Partno	Mfg	Dc	Qty	Available	Descript
IRF6710S2TRPBF	IOR	N/a	90	avai	A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance.