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IRF6645TR1PBFIRN/a2100avaiA 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes.


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IRF6645TR1PBF
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes.
International IRF6645PbF
TOR Rectifier ltMlfltSMtlt2Ap
DirectFETTM Power MOSFET Cl)
Typical values (unless otherwise specified)
o RoHS Compliant, Haloaen-Free Q)
q Lead-Free (Qualified up to 260°C Reflow) C)
q Application Specific MOSFETs DSS GS DS(on)
q Ideal for High Performance Isolated Converter 100V max WUN max 28mf2@ 10V
Primary Switch Socket Qg tot di Vgs(th)
0 Optimized for Synchronous Rectification
. 14nC 4.8nC 4.0V
0 Low Conduction Losses
0 High Cdv/dt Immunity
q Low Profile (<0.7mm)
a Dual Sided Coolinq Compatible co
q Compatible with existina Surface Mount Techniques co
DirectFETm ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see 0.7.8 for details)C)
ISHIIIISPI IMZIMNI I I I I
Description
The IRF6645PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micr08 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V OD 5.7
ID @ T, = 70°C Continuous Drain Current, l/ss © 10V © 4.5 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V © 25
IDM Pulsed Drain Current co 45
EAS Single Pulse Avalanche Energy © 29 mJ
IAR Avalanche Current s 3.4 A
E 12 I 3 4A I
- = . = V
A ID - 3.4A g 10 D vros--, 80
Cl g VDS= 50V Jit,9''"
E i; 8 r"'f,,r"
3 T J = 125°C P. ",,,,t',','Y
(I) 3 6
f U.) / /
E is. 4 o,,/'"
- th 2
4 6 8 1O 12 14 16 O 4 8 12 16
Ves, Gate-to-Source Voltage (V) QG Total Gate Charge (no)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co Tc measured with thermocouple mounted totop (Drain) ot part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 5.0mH, Rs = 259, las = 3.4A.
fl @2012 International Rectifier February 26, 2013

lt0)R, IRF6645/TRPbF
Electrical Characteristic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V l/tss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 28 35 mn VGS = 10V, ID = 5.7A ©
VGS(th) Gate Threshold Voltage 3.0 - 4.9 V Vos = Vas, ID = 50pA
AVGS(,h,/ATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, I/tss = 0V
- - 250 l/os = 80V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
gfs Forward Transconductance 7.4 - - S Vos = 10V, ID = 3.4A
q, Total Gate Charge - 14 20
0931 Pre-Vth Gate-to-Source Charge - 3.1 - l/os = 50V
Qgsz Post-Vth Gate-to-Source Charge - 0.8 - nC l/ss = 10V
di Gate-to-Drain Charge - 4.8 7.2 ID = 3.4A
ngd, Gate Charge Overdrive - 5.3 - See Fig. 15
st Switch Charge (Q982 + di) - 5.6 -
Qoss Output Charge - 7.2 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 1.0 - Q
tom Turn-On Delay Time - 9.2 - VDD = 50V, Vas = 10V co
t, Rise Time - 5.0 - ID = 3.4A
1om Turn-Off Delay Time - 18 - ns Rs--6.20
t, Fall Time - 5.1 -
Ciss Input Capacitance - 890 - Ves = 0V
Coss Output Capacitance - 180 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 4O - f = 1.0MHz
Coss Output Capacitance - 870 - Vss = 0V, VDS = 1.0V, f=1.0MHz
Coss Output Capacitance - 100 - Vss = 0V, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 25 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 45 integral reverse G s
(Body Diode) s p-n junction diode.
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 3.4A, Vss = 0V ©
trr Reverse Recovery Time - 31 47 ns TJ = 25°C, IF = 3.4A, VDD = 50V
a,, Reverse Recovery Charge - 40 60 nC di/dt = 100A/ps OD
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
Cr) Pulse width I 400ps; duty cycle s 2%.
© 2012 International Rectifier February 26, 2013

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