IRF6637TR1 ,DirectFETPower MOSFETapplications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
IRF6637TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-niques ..
IRF6637TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes.IRF6637PbFIRF6637TRPbFDirectFETPower MOSFET ..
IRF6638TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsV 30Drain-to-Source Voltage VDSV Gate-to-S ..
IRF6638TRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.IRF6638PbFIRF6638TRPbFDirectFETPower MOSFET RoHs Compliant ..
IRF6641 ,A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes.applications. Base part number Package Type Standard Pack Orderable Part Number Form Quantity I ..
IS80C32-40PQ , CMOS SINGLE CHIP LOW VOLTAGE 8-BIT MICROCONTROLLER
IS80C88-2 ,CMOS 8/16-Bit MicroprocessorFeatures Description• Compatible with NMOS 8088 The Intersil 80C88 high performance 8/16-bit CMOS C ..
IS82C237-12 ,CMOS High Performance Programmable DMA Controllerfeatures for flexible operation.ModeThe 82C237 is designed to be used with an external address• Comp ..
IS82C37A ,CMOS High Performance Programmable DMA ControllerFeatures Description• Compatible with the NMOS 8237A The 82C37A is an enhanced version of the indus ..
IS82C50A-5 ,CMOS Asynchronous Communications Element82C50ACMOS AsynchronousCommunications ElementMarch 1997
IS82C52 ,CMOS Serial Controller InterfaceFeatures Description• Single Chip UART/BRG The Intersil 82C52 is a high performance programmableUni ..
IRF6637-IRF6637TR1
DirectFETPower MOSFET
PD - 96968
IRF6637
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
TOR Rectifier
0 Lead and Bromide Free co
o Low Profile (<0.7 mm)
0 Dual Sided Cooling Compatible co
Voss Vas RDS(on) RDS(on)
30V max t201/ max 5.7mQ© 10V 8.2m§2@ 4.5V
0 Ultra Low Package Inductance th, tot di Asst on Qoss Vgs(th)
0 Optimized for High Frequency Switching co 11nC 4.0nC 1.0nC 20nC 9.9nC 1.8V
0 Ideal for CPU Core DC-DC Converters
0 Optimized for both Sync.FET and some Control FET
applicationC0 '
0 Low Conduction and Switching Losses 8 tttd
0 Compatible with existing Surface Mount Techniques co ~
MP DirectFET"' lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
SQ SX ST MQ MX MT INP
Description
The IRF6637 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t20
ID © TA = 25°C Continuous Drain Current, Vcis @ 10V (3) 14
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V Cs) 11 A
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V (4) 59
IBM Pulsed Drain Current (5) 110
EAS Single Pulse Avalanche Energy © 31 mJ
IAR Avalanche Current s 11 A
25 I 7 12 I I
ID =14A T; ID=11A VDS=, 24V
A CD 10 l
Cl M =
g 20 I-; VDS 15V -sve:s''''"
g 8 8 s:,,'"''"
8 15 g 6 "et
tE \ U.) ",e,,t'"'''''"
- T = 125°C Sl
tit J I 4 j
a 10 lc """-------"-aa=, (ll.
i o 2 /
T J = 25°C t /
5 I > 0
V , Gate-to-So rce Volta e V
GS u g ( ) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.52mH, Re = 25Q, lAs = IIA.
1
2/15/05
IRF6637 International
IEZR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, b = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 26 - mV/°C Reference to 25°C, ID = 1mA
RDson) Static Drain-to-Source On-Resistance - 5.7 7.7 m9 l/ss = 10V, ID = 14A (D
- 8.2 10.8 vGS = 4.5V, ID =11A CO
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = I/ss, ID = 250uA
AVGSOm/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA VDs = 24V, l/ss = 0V
- - 150 Vos = 24V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 38 - - S VDs = 15V, '0 = 11A
Qg Total Gate Charge - 11 17
0951 Pre-Vth Gate-to-Source Charge - 3.1 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 4.0 6.0 ID = 11A
0900., Gate Charge Overdrive - 2.9 - See Fig. 15
st Switch Charge (0952 + di) - 5.0 -
Qoss Output Charge - 9.9 - nC VDS = 16V, l/ss = 0V
Rs Gate Resistance - 1.2 - Q
tum) Turn-On Delay Time - 12 - VDD = 16V, VGS = 4.5V OD
t, Rise Time - 15 - ID =11A
td(ott) Turn-Off Delay Time - 14 - ns Clamped Inductive Load
t, Fall Time - 3.8 -
Ciss Input Capacitance - 1330 - Ves = 0V
Coss Output Capacitance - 430 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.9 MOSFET symbol 0
(Body Diode) A showing the Lt
' Pulsed Source Current - - 110 integral reverse G (rd,
(Body Diode) © p-n junction diode. fl
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 11A, I/ss = 0V co
trr Reverse Recovery Time - 13 20 ns TJ = 25°C, IF = 11A
Q,, Reverse Recovery Charge - 2O 30 n0 di/dt = 500A/ps OD
Notes:
co Pulse width 3 400ps; duty cycle S 2%.
© Repetitive rating; pulse width limited by max. junction temperature.
2
