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IRF6629TRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
PD - 97235
International IRF6629PbF
TOR Rectifier IFlF6629TRPbF
DirectFETTM Power MOSFET C)
q RoHs Compliant co Typical values (unless otherwise specified)
o Lead-Free (Qualified up to 260°C Reflow)
0 Application Specific MOSFETs
Voss Vas RDS(on) RDS(on)
Id If CPU C DC DC C rt 25V max t20V max 1.6mQ@ 10V 2.1mQ© 4.5V
o ea or ore - onve ers
0 Low Conduction Losses 09 tot tu, Ass, ar, Qoss vgs(th)
0 Low Profile (<0.7mm)
It Dual Sided Cooling Compatible co -t l 'i,,)-,
q Compatible with existing Surface Mount Techniques co . , .
eff” F
- . TM
MX DirectFET lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMala3lMrlMPl I ll
Description
The IRF6629PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 25 V
Vss Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V © 29
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V O) 23 A
ID © Tc = 25°C Continuous Drain Current, Vss © 10V Ct) 180
IDM Pulsed Drain Current co 230
EAs Single Pulse Avalanche Energy © 1170 mJ
lan Avalanche Current s 23 A
ID =29A
TJ=25°C
Typical RDS(on) (m9)
0 -* N (0 -¥-‘- U1 0) \I oo
VGS’ Gate-to-Source Voltage (V)
2 4 6 8 10 12 14 16 0 10 20 30 40
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
N t Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. © To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 4.4mH, Re = 25Q, IAS = 23A.
1
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IRF6629PbF International
TOR Rectifier
Static tii) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V VGs = 0V, ID = 250UA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 17 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 1.6 2.1 m9 Ves = 10V, ID = 29A ©
- 2.1 2.7 I/ss = 4.5V, b = 23A ©
VGSM Gate Threshold Voltage 1.35 1.8 2.35 v VDs = Veg. ID = 100PA
AI/sam/AT, Gate Threshold Voltage Coefficient - -6.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 20V, Ves = 0V
- - 150 1/ros = 20v, I/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -201/
gfs Forward Transconductance 150 - - S VDS = 15V, ID = 23A
Qg Total Gate Charge - 34 51
0931 Pre-Vth Gate-to-Source Charge - 7.8 - VDs = 13V
0932 Post-Vth Gate-to-Source Charge - 4.2 - nC VGS = 4.51/
di Gate-to-Drain Charge --..-. 11 --..-. ID = 23A
ngdr Gate Charge Overdrive - 11 - See Fig. 15
st Switch Charge (0932 + di) - 15 -
Qoss Output Charge - 23 - nC VDS = 16V, Vas = 0V
Re Gate Resistance - 1.3 3.2 Q
tdmn) Turn-On Delay Time - 20 - VDD = 13V, l/ss = 4.5V Cr)
t, Rise Time - 67 - ID = 23A
tdwm Turn-Off Delay Time - 20 - ns Clamped Inductive Load
tf Fall Time - 7.4 - See Fig. 17
Ciss Input Capacitance - 4260 - I/ss = 0V
Coss Output Capacitance - 1130 - pF I/os = 13V
Crss Reverse Transfer Capacitance - 550 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.5 MOSFET symbol D
(Body Diode) A showing the L,-,
Iss, Pulsed Source Current - - 230 integral reverse G (o-'.
(Body Diode) s p-n junction diode. fl
VSD Diode Forward Voltage - - 1.0 V To = 25°C, ls = 23A, Ves = 0V ©
tr, Reverse Recovery Time - 22 33 ns TJ = 25°C, IF = 23A
Qrr Reverse Recovery Charge - 27 41 n0 di/dt = 220A/us co See Fig. 18
Notes:
S Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle 3 2%.
2
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