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IRF6628IRN/a20avaiA 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
IRF6628TR1PBFIRN/a1000avaiA 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
IRF6628TRPBFIRN/a43200avaiA 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.


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IRF6628-IRF6628TR1PBF-IRF6628TRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.
International
TOR Rectifier
o RoHs Compliant C)
PD - 97234
IRF6628PbF
IRF6628TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o Lead-Free (Qualified up to 260°C Reflow) Voss Vas RDs(on) RENO”)
0 Application Specific MOSFETs 25V max t201/ max 1.9mQ© 10V 2.5mQ© 4.5V
Id If CPU C DC-DC C t
: Loev:l Czrnductionoiisses onver ers % tot di 0952 ar,. Qoss vgsah)
. . 31nC 12nC 4.1nC 26nC 21nC 1.9V
0 High Cdv/dt Immunity
0 Low Profile (<0.7mm)
0 Dual Sided Cooling Compatible co 'fir-y,, ..
0 Compatible with existing Surface Mount Techniques co 5’9; ''
DirectFETTM lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMala3lMrl
MP I I I I
Description
The IRF6628PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETrM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, intra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V BD 27
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V © 22 A
ID © TC = 25°C Continuous Drain Current, Vss @ 10V C4) 160
I M Pulsed Drain Current 6) 220
EAS Single Pulse Avalanche Energy © 38 mJ
IAR Avalanche Current CO 22 A
A ID = 27A 8,
Ci St,
"C.., >
sf., P.
f w‘.’
a T J = 125°C 5.3
TJ = 25 C db
3 4 5 6 7 8 9 10 11 o 10 20 30 40
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
N t Fig I. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
© TC measured with thermocouple mounted to top (Drain) of part.
CD Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T, = 25°C, L = 0.16mH, Rs = 25Q, lAs = 22A.
1
07/11/06
OD Click on this section to link to the appropriate technical paper.
http:l/www.lo_q.com/
IRF6628PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 16 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 1.9 2.5 m9 Vss = 10V, ID = 27A Cr)
- 2.5 3.3 Vss = 4.5V, ID = 22A ©
VGS(th) Gate Threshold Voltage 1.35 1.9 2.35 V VDS = Ves. ID = 100UA
AVGSGm/ATJ Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 20V, Ves = 0V
- - 150 VDs = 20V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO Ves = -20V
gfs Forward Transconductance 100 - - S VDs = 13V, '0 = 22A
q, Total Gate Charge - 31 47
0931 Pre-Vth Gate-to-Source Charge - 7.5 - VDS = 13V
Asst Post-Vth Gate-to-Source Charge - 4.1 - nC Ves = 4.5V
di Gate-to-Drain Charge - 12 - ID = 22A
ngd, Gate Charge Overdrive - 7.4 - See Fig. 15
st Switch Charge (0952 + di) - 16 -
Qoss Output Charge - 21 - nC VDs = 16V, VGS = 0V
Rs Gate Resistance - 1.2 2.2 Q
td(on) Turn-On Delay Time - 20 - VDD = 13V, l/as = 4.5V ©
t, Rise Time - 83 - ns '0 = 22A
tdom Turn-Off Delay Time - 17 - Clamped Inductive Load
t, Fall Time - 6.7 - See Fig. 17
Ciss Input Capacitance - 3770 - Vss = 0V
Coss Output Capacitance - 970 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 500 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3.5 MOSFET symbol L)
(Body Diode) A showing the Lr,
ISM Pulsed Source Current - - 220 integral reverse G E
(Body Diode) S p-n junction diode. q
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 22A, Ves = 0V co
trr Reverse Recovery Time - 21 32 ns TJ = 25°C, IF = 22A
Q,, Reverse Recovery Charge - 26 39 n0 di/dt = 250A/ps co See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 3 400ps; duty cycle LC 2%.
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