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IRF6626TR1IRN/a970avaiLeaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes.


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IRF6626TR1
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes.
International
TOR Rectifier
o RoHS compliant containing no lead or bromide C)
PD - 96976D
llRF6626
DirectFETTM Power MOSFET C2)
Typical values (unless otherwise specified)
q Low Ptofile (for7. mm) . VDss Ves RDS(on) RDS(on)
q Dual Sided Cooling Compatible co 301/ max e2UN max 4.0mQ@ 10V 5.2mQ© 4.5V
0 Ultra Low Package Inductance
Q Q Q t2 O V
0 Optimized for High Frequency Switching O) il tot gd gs2 rr oss gslLhL
0 Ideal for CPU Core DC-DC Converters 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
. Optimized for both Sync. FET and some Control FET
applications co
. Low Conduction and Switching Losses 1 E- It
0 Compatible with existing Surface MountTechniques C) D G s D
ST DirectFETr" ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISOISXIEiTI IMQIMXIMTI I I I
Description
The IRF6626 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
L/sas Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V © 16
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V © 13 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 72
IBM Pulsed Drain Current © 130
EAS Single Pulse Avalanche Energy © 24 md
IAR Avalanche Current © 13 A
15 'f.
ID = 16A a:
"iii" fl/
jE IO "Ns i;
o T = 125°C o
UV) "''''''ss, J 's
a 5 "ss..., s)
'3 T =25c'C p,
r-"' J - g;
3 4 5 6 7 8 0 IO 20 30
VGS Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
co Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET MOSFETs
© Repetitive rating; pulse width limited by max. junction temperature.
© Starting To = 25°C, L = 0.29mH, Ra = 259, IAS = 13A.
© Surface mounted on 1 in. square Cu board, steady state.
© TC measured with thermocouple mounted to top (Drain) of part.
1
1 1/17/05

IRF6626 International
IEER Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 23 - mV/°C Reference to 25'C, ID = 1mA
R0510,” Static Drain-to-Source On-Resistance - 4.0 5.4 m9 Ves = 10V, '0 = 16A s
_ 5.2 7.1 Vss = 4.5V, ID = 13A Cs)
Vesuh) Gate Threshold Voltage 1.35 - 2.35 V Vos = Vas, ID = 250pA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 64 - - S Vos = 15V, '0 = 13A
q, Total Gate Charge - 19 29
0951 Pre-Vth Gate-to-Source Charge - 5.2 - Vos = 15V
0932 Post-Vth Gate-to-Source Charge - 1.6 - nC Vas = 4.5V
di Gate-to-Drain Charge - 6.7 ID = 13A
ngd, Gate Charge Overdrive - 5.5 - See Fig. 17
th,, Switch Charge (0952 + di) - 8.3 -
Qoss Output Charge - 13 - nC Vos = 16V, Vss = 0V
Re Gate Resistance - - 1.5 Q
taon) Turn-On Delay Time - 13 - VDD = 16V, Vss = 4.5V S
t, Rise Time - 15 - ID = 13A
tdom Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 4.5 -
Ciss Input Capacitance - 2380 - I/ss = 0V
Coss Output Capacitance - 530 - pF Vos = 15V
c,, Reverse Transfer Capacitance - 260 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 52 MOSFET symbol D
(Body Diode) A showing the H]:
Iss, Pulsed Source Current - - 130 integral reverse G c,
(Body Diode) © p-n junction diode. Fl
Va, Diode Forward Voltage - - 1.0 V Tu = 25°C. ls = 13A, N/ss = 0V S
t,, Reverse Recovery Time - 15 23 ns Tu = 25°C, IF = 13A
Qrr Reverse Recovery Charge - 5.4 8.1 nC di/dt = 100A/ps ©
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
s Pulse width f 400ps; duty cycle S 2%.
2

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