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IRF6621TR1PBF-IRF6621TRPBF
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes.
PD - 97093
llRF6621PbF
IfRF6621TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
International
TOR Rectifier
o RoHS Compliant C) Voss Vas RDS(on) RDS(on)
q /t,e.t,rtieoe, 2utll1g2iii" Reflow) 30V max t20V max 7.0mS2@ 10V 9.3mg2@ 4.5V
0 pp ma non pecl IC s
0 Ideal for CPU Core DC-DC Converters 09 tot tu, Asst th, tus, Vgs(th)
0 Low Conduction Losses and Switching Losses 11.7nC 4.2nC 1.0nC 10nC 6.9nC 1.8V
0 Low Profile (<0.7mm)
qt Dual Sided Cooling Compatible C)
q Compatible with existing Surface Mount Techniques co ._.4
SQ DirectFET"' lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)0D
ail SX ST MQ MX MT MP
Description
The IRF6621PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MlCRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
1hos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V © 12
ID @ TA = 70°C Continuous Drain Current, Ves © 10V © 9.6 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V © 55
IBM Pulsed Drain Current 6) 96
EAS Single Pulse Avalanche Energy © 13 mJ
IAR Avalanche Current s 9.6 A
25 . "ii.". 12 I I I
A " ID = 12A 8, 10 ID: 9.6A VDS= T/
E 20 g VDS: 15V 2f"
"E" m 8 '
f 15 N 5 6 ',,,,,,k
a "c.,,, T J = 125°C s) 4 /
F,'. IO "''"s-, ‘3
.3 Q 2 f"
T J = 25°C ".---_, 8 /
5 I > 0
Vas, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
Notes: Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper.
CD Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
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© TC measured with thermocouple mounted to top (Drain) of part.
S Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 0.29mH, Rs = 259, lAs = 9.6A.
5/24/06
IRF6621 PbF International
IEZR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 7.0 9.1 m9 I/ss = 10V, ID = 12A ©
- 9.3 12.1 Vss = 4.5V, ID = 9.6A C)
VGS(1h) Gate Threshold Voltage 1.35 1.8 2.25 V VDs = I/ss, ID = 250pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -5.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 24V, l/ss = 0V
- - 150 VDS = 24V, I/ss = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 31 - - S VDs = 15V, ID = 9.6A
q, Total Gate Charge - 11.7 17.5
0931 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 15V
Asa Post-Vth Gate-to-Source Charge - 1.0 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 4.2 - ID = 9.6A
ngd, Gate Charge Overdrive - 3.2 - See Fig. 15
st Switch Charge (0982 + 090.) - 5.2 -
Qoss Output Charge - 6.9 - nC VDs = 15V, Ves = 0V
Re Gate Resistance - 2.0 - Q
tdon) Turn-On Delay Time - 12 - VDD = 15V, I/as = 4.5V (D
t, Rise Time - 14 - ID = 9.6A
tom Turn-Off Delay Time - 16 - ns Clamped Inductive Load
t, Fall Time - 4.1 -
Ciss Input Capacitance - 1460 - l/ss = 0V
Coss Output Capacitance - 310 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the F2:
ISM Pulsed Source Current - - 96 integral reverse G IL',
(Body Diode) s p-n junction diode. SI
Va, Diode Forward Voltage - 0.8 1.0 v To = 25°C, ls = 9.6A, Vss = 0V ©
t,, Reverse Recovery Time - 9.8 15 ns T, = 25°C, IF = 9.6A
Qrr Reverse Recovery Charge - 10 15 n0 di/dt = 42OA/ps C)
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width s 400ps; duty cycle S 2%.
2
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