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IRF6620TR1PBFIR ?N/a10603avaiA 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
IRF6620TR1PBFIORN/a184avaiA 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
IRF6620TR1PBFIRN/a566avaiA 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
IRF6620TRPBFIORN/a2254avaiA 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.


IRF6620TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
IRF6620TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, ..
IRF6620TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.IRF6620PbFIRF6620TRPbFDirectFETPower MOSFET  RoHS Compliant V R max Qg(typ.) Lead- ..
IRF6620TRPBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.IRF6620PbFIRF6620TRPbFDirectFETPower MOSFET  RoHS Compliant V R max Qg(typ.) Lead- ..
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IRF6621TR1PBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
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IRF6620TR1PBF-IRF6620TRPBF
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.
International
IeaR Rectifier
o RoHS Compliant (O
o Lead-Free (Qualified up to 260°C Reflow)
PD - 97092
lRF6620PbF
llRF6620TRPbF
DirectFETTM Power MOSFET ©
o Application Specific
o Ideal for CPU Core
MOSFETs
DC-DC Converters
0 Low Conduction Losses
0 High Cdv/dt Immunity
o Low Profile (o Dual Sided Cooling
Compatible OD
0 Compatible with existing Surface Mount Techniques co
Voss RDS(on)max tlg(typ0
201/ 2.7mQ@VGs--10V 28nC
3.6mQ@VGS = 4.5V
G E: s l
DirectFETrM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
Isalsxl
Description
srl IMallim
The IRF6620PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage :20
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V © 150
ID @ TA = 25°C Continuous Drain Current, Vss © 10V © 27 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 22
IDM Pulsed Drain Current O) 220
PD @TC = 25°C Power Dissipation © 89
PD @TA = 70°C Power Dissipation © 1.8 W
PD @TA = 25°C Power Dissipation © 2.8
EAS Single Pulse Avalanche Energy@ 39 mJ
IAR Avalanche Current s 22 A
Linear Derating Factor 0.017 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Ambient (DQ) - 45
ROJA Junction-to-Ambient ©Q) 12.5 -
ReJA Junction-to-Ambient ao 2O °C/W
Rm Junction-to-Case ©& - 1.4
ReJ-PCB Junction-to-PCB Mounted 1.0 -
Notes co through are on page 2
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5/11/06
IRF6620PbF International
IEZR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 16 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.1 2.7 mn Vss = 10V, ID = 27A Cs)
- 2.8 3.6 I/ss = 4.5V, ID = 22A co
VGS(th) Gate Threshold Voltage 1.55 - 2.45 V 1/ros = I/ss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.8 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, l/tss = 0V
- - 150 ks-- 16V, sz=ov,TJ= 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 110 - - S VDS = 10V, ID = 22A
Qg Total Gate Charge - 28 42
0951 Pre-Vth Gate-to-Source Charge - 9.5 - Vos = 10V
0932 Post-Vth Gate-to-Source Charge - 3.5 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 8.8 - ID = 22A
ngd, Gate Charge Overdrive - 6.2 - See Fig. 15
st Switch Charge (0952 + di) - 12 -
Qoss Output Charge - 16 - nC l/rss = 10V, Vss = 0V
tdmn) Turn-On Delay Time - 18 - VDD = 16V, I/ss = 4.5V S
t, Rise Time - 80 - ID = 22A
td(ott) Turn-Off Delay Time - 20 - ns Clamped Inductive Load
t, Fall Time - 6.6 -
Ciss Input Capacitance - 4130 - l/ss = 0V
Coss Output Capacitance - 1 160 - pF l/rss = 10V
Crss Reverse Transfer Capacitance - 560 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current@ TC=25°C - - 110 MOSFET symbol D
(Body Diode) A showing the ’7]:
ISM Pulsed Source Current - - 220 integral reverse 5 E
(Body Diode) © p-n junction diode. s
VSD Diode Forward Voltage - 0.8 1.0 V To = 25°C, ls = 22A, l/tss = 0V Cs)
trr Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 22A
Q,, Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps s
Notes:
Ci) Click on this section to link to the appropriate technical paper. © Surface mounted on 1 in. square Cu board.
© Click on this section to link to the DirectFET Website. © Used double sided cooling, mounting pad.
© Repetitive rating; pulse width limited by max. junction Mounted on minimum footprint full size board with
temperature. metalized back and with small clip heatsink.
G) Starting TJ = 25°C, L = 0.16mH, Rs = 259, IAS = 22A. © TC measured with thermal couple mounted to top
6) Pulse width s 400ps; duty cycle S 2%. (Drain) of part.
60 Ro is measured at TJ of approximately 90°C.
2
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