IRF6601 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 20 VV Gate-to- ..
IRF6602 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipmentand vapor phase, infra-red or convection soldering techniques, ..
IRF6603 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6604 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assemblyequipment and vapor phase, infra-red or convection soldering techniques. ..
IRF6607 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6607TR1 ,Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
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IRF6601
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
International
a:aRRectifier
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with exisiting Surface Mount
Techniques
PD - 94366D
IRF6601
HEXFET© Power MOSFET
RDS(on) max Qg
3.8mQ@VGS = 10V 30nC
5.0mQ@VGS = 4.5V
Description
r,iiiiibtc,
DirectFETr" ISOMETRIC
The IRF6601 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high emciency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage 120
ID @ TC = 25°C Continuous Drain Current, I/ss @ 10V 85
ID © TA = 25°C Continuous Drain Current, I/ss @ 10V 26 A
ID © TA = 70°C Continuous Drain Current, Vss @ 10V 20
IDM Pulsed Drain Current OD 200
Po @TA = 25°C Power Dissipation C) 3.6
Po @TA = 70°C Power Dissipation © 2.3 W
PD @Tc = 25°C Power Dissipation 42
Linear Deratinq Factor 0.029 W/°C
Tu Operating Junction and -40 to + 150 "C
TSTG Storage Temperature Range
Thermal Res stance
R0J-PCB
Parameter
Junction-to-PCB Mounted
Notes C) through © are on page 11
06/11/03
IRF6601 International
Static @ To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 19 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.2 3.8 mn Vss = 10V, ID = 26A ©
- 4.4 5.0 Vss = 4.5V, ID = 21A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V l/ns = VGS, b = 250pA
AVGsah)/ATJ Gate Threshold Voltage Coefficient - -4.6 - mVI°C
loss Drain-to-Source Leakage Current - - 20 pA Vros = 16V, Vss = 0V
- - 100 Vos = 16V, VGS = 0V, T: = 70°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 50 - - S Vos = 10V, ID = 21A
q, Total Gate Charge - 30 45
Qgs1 Pre-Vth Gate-to-Source Charge - 5.4 - Ws = 10V
Qgs2 Post-Vth Gate-to-Source Charge - 2.9 - nC VGS = 4.5V
di Gate-to-Drain Charge - 12 - lo = 16A
ngdr Gate Charge Overdrive - 9.2 - See Fig. 16
st Switch Charge (0952 + di) - 15 -
Qoss Output Charge - 48 - nC Ws = 16V, N/ss = OV
tum) Turn-On Delay Time - 61 - VDD = 15V, Vss = 4.5V ©
t, Rise Time - 21 - b = 21A
tam Turn-Off Delay Time - 28 - ns Clamped Inductive Load
tr Fall Time - 22 -
Ciss Input Capacitance - 3440 - VGS = 0V
Cass Output Capacitance - 2430 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 380 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS an rgy 65
IAR urrent 21
EAR epe va
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 26 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 200 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - 0.83 1.2 V TJ = 25°C, IS = 21A, VGS = 0V ©
trr Reverse Recovery Time - 60 90 ns To = 25°C, IF = 21A
er Reverse Recovery Charge - 94 140 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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