IRF644PBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
I912 Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Av ..
IRF644S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF644SPBF ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package' International
TOR Rectifier
HEXFETar Power MOSFET
q Surface Mount
q Available in Tape & ..
IRF644STRL ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF650 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 28A, 200V, R = 0.085Ω @V = 10 VDS(on) ..
IRF650B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 VDS(on) ..
IS63LV1024-12J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12J , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12JI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12K , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12KI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12KL , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IRF644PBF
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
rtietr,ritiipt,tal
142R Rectifier
PD-9.527B
IRF644
HEXFET® Power MOSFET
tt Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
D vDSS LT."... 250v
r3 RDS(OI‘I) = 0.289
s ID = 14A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. T Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 14
lo © Tc = 100°C Continuous Drain Current, I/ss @ 10 V 8.5 A
IDM Pulsed Drain Current CD 56
Po © To = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
Vss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy (2) 550 mJ
IAR Avalanche Current co 14 A
EAR Repetitive Avalanche Energy C) 13 mo
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To _ Operating Junction and -55 to +150
TSTG Storage Temperature Range' 0c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nam)
Thermal, Resistance
Parameter Min. Typ. Max. Units
RGJC Junction-to-Case - - 1 .0
Recs Case-to-Sink, Feit, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IR F644
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V Ves=OV, lo: 25thiA
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient '--... 0.34 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.28 f2 VGs=1OV, ID=8.4A ©
V9501.) Gate Threshold Voltage 2.0 - 4.0 V l/os-Was, ID: 250PA
gfs Forward Transconductance 6.7 - - S Vos=50V, ID=8.4A ©
loss Drain-to-Source Leakage Current - - 25 WA lhos=250V, Vss=OV
- - 250 Vos=200V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=2OV
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
Qg Total Gate Charge - - 68 |o=7.9A
Qgs Gate-to-Source Charge - - 11 n0 VDs=2OOV
the Gate-to-Drain ("Miller") Charge -- - 35 _ VGs=10V See Fig. 6 and 13 ©
tdton) Turn-On Delay Time - 11 - VDD=125V
tr Rise Time - 24 - n s b=7.9A
td(off) Turn-Off Delay Time - 53 - Re=9.1Q
lt Fall Time .-..... 49 - RD=8.7Q See Figure 10 ©
. Between ksad,' D
Ln Internal Drain Inductance - 4.5 - 6 mm (0.25in.) (ii)
nH from package G
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact 5
Ciss Input Capacitance -- 1300 - Vss=0V
Coss Output Capacitance - 330 - pF Vos=25V
Crss Reverse Transfer Capacitance - 85 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ.' Max. Units Test Conditions
Is Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the b-,--.-,
ISM Pulsed Source Current - ._. 56 integral reverse G :1.
(Body Diode) CD p-n junction diode. s
Vso Diode Forward Voltage - -.... 1.8 V Tu=25oC, Is=14A, I/ss-HN G)
trr Reverse Recovery Time - 250 500 ns Te25oc, IF=7.9A
er Reverse Recovery Charge - 2.3 4.6 wc di/dt=100Alws ©
ton Forward Tum-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=4.5mH
He=25.Q, IAs=14A (See Figure 12)
© Isos14A, di/dts150A/us, VDDSV(BR)DSS.
TJS150°C
© Pulse width f. 300 us; duty cycle K2%.
