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IRF640STRRIRN/a800avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF640LPBFIRN/a3000avai200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF640SIRN/a274avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF640SPBFIRN/a243avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF640STRIRN/a600avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF640LPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a ty ..
IRF640N ,N-Channel Power MOSFETs 200V, 18A, 0.15-Ohmapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF640NL ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 94006AIRF640NIRF640NSIRF640NL Advanced Process Technology®HEXFET Power MOSFET Dynamic dv/dt ..
IRF640NLPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance andl ..
IRF640NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF640NS ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
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IRF640LPBF-IRF640S-IRF640SPBF-IRF640STR-IRF640STRR
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
PD -90902B
IRF640S/L
HEXFET© Power MOSFET
Surface Mount (IRF640S)
Low-profile through-hole (IRF640L)
Available in Tape & Reel (IRF640S)
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS = 200V
RDS(on) = 0.18n
ko-- 18A
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and cost-
effectiveness.
The D2Pak is a surface mount power package capable of
accommodating diesizes up to HEX-4. It providesthe highest
power capability and thelowest possible on-resistance in any
existing surface mountpackage. The D2Pak is suitabieforhigh
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available forlow-profileapplications.
Absolute Maximum Ratings
TO-262
Parameter
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10VS
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10VS
IDM Pulsed Drain Current (OS
Pro @TA = 25°C Power Dissipation
Pro @Tc = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
Ek, Single Pulse Avalanche Energy©©
IAR Avalanche Current(0
EAR Repetitive Avalanche Energy©
dv/dt Peak Diode Recovery dv/dt ss
TJ Operating Junction and
TSTG Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
ReJC Junction-to-Case
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)"

7/20/99
IRF640S/L International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - 0.29 - V/°C Reference to 25°C, ID = 1mA©
Rosion) Static Drain-to-Source On-Resistance - - 0.18 Q VGS = 10V, ID = 11A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
git Forward Transconductance 6.7 - - S Vos = 50V, Io = 11A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 Vros = 160V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
09 Total Gate Charge - - 70 ID = 18A
Qgs Gate-to-Source Charge - - 13 n0 VDS =160V
di Gate-to-Drain ("Miller") Charge - - 39 N/ss = 10V, See Fig. 6 and 13 ©S
td(on) Turn-On Delay Time - 14 - VDD =100V
tr RiseTime - 51 - ID = 18A
tum Turn-Off Delay Time - 45 - ns Rs = 9.19
tr FaIITime - 36 - Ro = 5.49, See Fig. 10 (96)
Ls Internal Source Inductance - 7.5 - nH Between lead,'
and center of die contact
Ciss Input Capacitance - 1300 - N/ss = ov
Coss Output Capacitance - 430 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 18 showing the
ISM Pulsed Source Current - - 72 A integral reverse G
(Body Diode) C)(9 p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V TJ = 25°C, Is = 18A, VGS = 0V ©
trr Reverse Recovery Time - 300 610 ns To = 25°C, IF = 18A
Qrr Reverse Recovery Charge - 3.4 7.1 pC di/dt = 100A/ps@©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 5 300ps; duty cycle f 2%.
max. junction temperature. (See ftg. 11 )
© VDD = 50V, starting To = 25°C, L = 2.7mH s Uses IRF640 data and test conditions
Rs = 259, IAS = 18A. (See Figure 12)
© Isro 5 18A, di/dt S 150A/ps, VDD S V(BR)oss,
T JS 150°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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