IRF624 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.1A, 250V, R = 1.1Ω @V = 10 VDS(on) ..
IRF624A , Advanced Power MOSFET
IRF624A , Advanced Power MOSFET
IRF624S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF630 ,9A, 200V, 0.400 Ohm, N-Channel Power MOSFETsIRF630IRF630FPN-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS DS(on) D ..
IRF630A ,Advanced Power MOSFETIRF630AAdvanced Power MOSFET
IS62LV5128LL-70BI , 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70TI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-85MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IRF624
250V N-Channel MOSFET
IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, R = 1.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF624B IRFS624B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 4.1 4.1 * A D C - Continuous (T = 100°C) 2.6 2.6 * A C I (Note 1) Drain Current - Pulsed 16.4 16.4 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 75 mJ AS I Avalanche Current (Note 1) 4.1 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 49 34 W D C - Derate above 25°C 0.39 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF624B IRFS624B Units R Thermal Resistance, Junction-to-Case Max. 2.54 3.7 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
