IRF620 ,5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFETIRF620IRF620FPN-CHANNEL 200V - 0.6Ω - 6A TO-220/FPPowerMesh™II MOSFETTYPE V R IDSS DS(on) DIRF620 2 ..
IRF6201TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageFeatures BenefitsLow R (≤ 2.45mΩ @ Vgs = 4.5V) Lower conduction lossesDSonresults in Industry-stan ..
IRF620PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
q Repetitive A ..
IRF620S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF621 ,N-Channel Power MOSFETs/ 7A/ 150-200Vapplications, ts) l
such as switching power supplies, converters, AC and DC
motor controls, relay ..
IRF6215 ,-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IS62LV2568LL-70H , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-70HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-70HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-85H , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-85HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV256AL-20TLI , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IRF620
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
1/9August 2000
IRF620
IRF620FPN-CHANNEL 200V - 0.6Ω - 6A TO-220/FP
PowerMesh™II MOSFET
(1)ISD ≤6A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
IRF620 / FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
IRF620 / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
IRF620 / FP
Transconductance
Transfer CharacteristicsOutput Characteristics
Thermal Impedence for TO-220
Static Drain-source On Resistance
5/9
IRF620 / FP
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
