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IRF614IRN/a15000avai250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF614PBFIRN/a32000avai250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRF614-IRF614PBF
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
EOR Rectifier
HEXFETO Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PD-9.475B
IIRF614
Voss = 250V
ID =".' 2.7A
Rosm) cr. 2-09
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
Io © To = 25°C Continuous Drain Current, Vas @ 10 V 2.7
10' @ To = 100°C Continuous Drain Current, Vss @ 10 V 1.7 A
IDM Pulsed Drain Current (D 8.0
PD © To = 25°C Power Dissipation 36 W
Linear Derating Factor 0.29 W/°C
I/cs Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 61 mJ
IAR Avalanche Current G) 2.7 A
EAR Repetitive Avalanche Energy C) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt Ct) 4.8 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 3.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RNA Junction-to-Ambient - - 62 _
IRF614
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGs=0V, ID: 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - VPC Reference to 25°C, 19: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 2.0 Q Vss=10V, 19:1.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGs, lo: 250pA
gfs Forward Transconductance 0.90 - - S Vos=50V, lo=1.6A ©
loss Drain-to-Source Leakage Current - - 25 pA Vios=250V, VGS=0V
' - - 250 Vos=200V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - -.... 100 n A Vss=20V
Gate-to-Source Reverse Leakage _....-. - -100 Vss=-20V
ch, Total Gate Charge - -- 8.2 lo=2.7A
Qgs Gate-to-Source Charge - - 1.8 no Vos=200V
di Gate-to-Drain ("Miller") Charge - - 4.5 Ves=1OV See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.0 - VDD=125V
tr Rise Time - 7.6 - ns ID=2.7A
tam) Turn-Off Delay Time - 16 - Fle=24£2
tt Fall Time - 7.0 - RD=45§2 See Figure 10 C4).
Lo Internal Drain Inductance - 4.5 - 3:119:32) D
nH from package GAE
Ls Internal Source Inductance - 7.5 - Ind center df (ii)
die contact s
Ciss Input Capacitance - 140 - l/er-UN
Cass Output Capacitance - 42 - pF Vos=25V
Crss Reverse Transfer Capacitance - 9.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 2 7 MOSFET symbol D
(Body Diode) _ A showing the b,-,-::
ISM Pulsed Source Current - -- 8 0 integral reverse G (tl-l
(Body Diode) CO . p-n junctiorrdiode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=2,7A/Vss---0V ©
tn Reverse Recovery Time - 190 390 ns TJ=25°C, |F=2.7A
er Reverse Recovery Charge - 0.64 1.3 PC dildt=100A/ws C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C2) VDD=50V, starting TJ=25°C, L=13mH
FIG=25§2, |As=2.7A (See Figure 12)
TJS150°C
© Iso.<.2.7A, di/dtri65A/ws, VDrosiV(rsn)Dss,
© Pulse width s: 300 us; duty cycle 32%.
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