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IRF610SVISHAYN/a176avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF610STRLIRN/a5800avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF610STRRIRN/a5600avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF610S-IRF610STRL-IRF610STRR
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
EOR Rectifier
PD-9.899
IAF:610S
HEXFET® Power MOSFET
0 Surface Mount
It Available in Tape & Reel
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 Fast Switching
o Ease of Paralleling
q Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible op-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-22O
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Ves @ 10 V 8.3
In @ To = 100°C Continuous Drain Current, I/ss © 10 V 2.1 A
\IDM _ Pulsed Drain Current CD 10
P0 o Tc = 25°C Power Dissipation 36 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 0.29 W P C
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage .+-20 V
EAS Single Pulse Avalanche Energy © 64 _ mJ
EAR Avalanche Current C) 3.3 A
EAR Repetitive Avalanche Energy (i) 3.6 md
dv/dt Peak Diode Recovery dv/dt S 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 3.5
Rss Junction-to-Ambient (PCB mount)" - - 4O °C/W
Ram Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF61OS
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs=OV, ID: 2500A
AV(Bn)oss/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - VPC Reference to 25°C, Io: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.5 Q Vss=10V, ID=2.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, Io: 250M
gfs Forward Transconductance 0.80 - - S Vos=50V, ID=2.OA co .
loss Drain-to-Source Leakage Current .......- - 25 pA Vos=200V, VGS=0V
- - 250 Vos=160V, VGS=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 8.2 ID=3.3A
Qgs Gate-to-Source Charge - - 1.8 nC Vos=160V
di Gate-to-Drain ("Miller") Charge .....-. - 4.5 Ves=10V See Fig. 6 and 13 ©
tam) Tu m-On Delay Time - 8.2 - VDD=100V
tr Rise Time - 17 - ns ID=3.3A
tum) Tum-Off Delay Time - 14 - Re=24Q
tr Fall Time - 8.9 - Prr--30f2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 -. 2:111:52 21:3 ') D
nH from package SQ:
Ls Internal Source Inductance - 7.5 - and center df 'ji)
die contact s
Ciss Input Capacitance - 140 - 1/ss=0V
Coss Output Capacitance - 53 - PF Vos--- 25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 3 MOSFET symbol D
(Body Diode) . A showing the L,-ir.
lsM Pulsed Source Current - - 10 integral reverse G :3.
(Body Diode) (i) p-n junction diode. s
VSD Diode FonNard Voltage - - 2.0 V TJ=25°C, ls=3.3A, Ves=OV ©
tn Reverse Recovery Time - 150 310 ns TJ=25°C, IF=3.3A ,
Cln. Reverse Recovery Charge - 0.60 1.4 M) di/dt=100A/ps ©
ton Forward Tum-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=8.8mH
RG=25Q, lAs=3.3A (See Figure 12)
© Iso_<.3.3A, di/de70A/ws, VDDSV(BR)DSS,
TJS1 50°C
© Pulse width s: 300 us; duty cycle S2%.
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