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IRF5810TRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
PD - 95469B
International
TOR Rectifier IIRF5810PbF
H EXFET® Power MOSFET
o Ultra Low On-Resistance
. Dual P-Channel MOSFET Vnss RDS(on) max (m9) Ir:
o iurfflslct: MOUTnt & R I -2ov 90@VGS = -4.5v -2.9A
q Val a e In ape ee 135@V = -2 5V -2 3A
0 Low Gate Charge GS . .
o Lead-Free
Halogen-Free
Description
These P-channel HEXFETO Power MOSFETs from m B:
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications. 02 J 4 Dfl
. . . . . TSOP-6
This Dual TSOP-6 package IS ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -2.9
In @ TA-- 70°C Continuous Drain Current, Vas @ -4.5V -2.3 A
IDM Pulsed Drain Current Ci) -11
Po @TA = 25°C Power Dissipation © 0.96 W
PD @TA = 70°C Power Dissipation © 0.62
Linear Derating Factor 0.008 mW/°C
VGS Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 130 “CNV
1
04/20/10
IRF5810PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 60 90 mg VGS = -4.5V, ID = -2.9 ©
- 87 135 VGS = -2.5V, ID = -2.3A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250pA
gts Forward Transconductance 5.4 - - S Vos = -10V, lo = -2.9A
Kass Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, Vss = 0V
- - -25 Vos = -16V, l/tss = 0V, Tu = 70°C
I Gate-to-Source Forward Leakage - - -100 n A I/es = -12V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 12V
% Total Gate Charge - 6.4 9.6 [D = -2.9A
Qgs Gate-to-Source Charge - 1.2 1.8 nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 1.7 2.6 l/ss = -4.5V
tri(on) Turn-On Delay Time - 8.2 - VDD = -10V ©
t, Rise Time - 14 - ns ID = -1.0A
tum) Turn-Off Delay Time - 62 - Rs = 6.09
tt Fall Time - 53 - Vas = -4.5V
Ciss Input Capacitance - 650 - Vas = 0V
Coss Output Capacitance - 110 - pF Vos = -16V
Crs,S Reverse Transfer Capacitance - 86 - f = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 O MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 1 1 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, VGS = 0V ©
tn Reverse Recovery Time - 110 170 ns To = 25°C, IF = -1.0A
Qrr Reverse Recovery Charge - 130 200 nC di/dt = -1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
