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IRF5804TRPBF
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
PD - 95503B
IRF5804PbF
HEXFET© Power MOSFET
Voss RDS(on) max (mf2) ID
-4ov 198@Vss = -1ov -2.5A
334@VGS = -4.5V -2.0A
DD] D10 ifiri'
. . . TSOP-6
load management applications. Top View
The TSOP-6 package with its customized leadframe
produces a HEXFET© power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is ata premium. It's unique thermal design and Roam)
reduction enablesa current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ -10V -2.5
ID @ TA-- 70°C Continuous Drain Current, Ves @ -10V -2.0 A
IDM Pulsed Drain Current (D -10
PD @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 0.016 mW/°C
Vss Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 62.5 °C/W
1
04/20/10
IRF5804PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = -1mA
. . . - - 198 Vas = -10V, ID = -2.5 ©
R Static Drain-to-Source On-Resistance
DS(on) - - 334 mn VGS = -4.5v, ID = -2.0A ©
Vesah) Gate Threshold Voltage -1.0 - -3.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 2.5 - - S Vos = -10V, ID = -2.5A
loss Drain-to-Source Leakage Current - - -10 pA 1hos = -32V, VGS = 0V
- - -25 Ihos = -32V, l/ss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 20V
09 Total Gate Charge - 5.7 8.5 ID = -2.5A
Qgs Gate-to-Source Charge - 2.8 4.2 nC VDs = -20V
di Gate-to-Drain ("Miller") Charge - 2.1 3.2 Vas = -10V
tdmn) Turn-On Delay Time - 19 - VDD = -20V ©
tr Rise Time - 430 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 100 - Re = 6.09
if Fall Time - 64 - Vas = -10V
Ciss Input Capacitance - 680 - Vas = 0V
COSS Output Capacitance - 60 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 44 - f = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 10 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V ©
tn Reverse Recovery Time - 24 36 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 32 49 nC di/dt = -100A/us ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
