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IRF5803TRPBFIRN/a10117avai-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package


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IRF5803TRPBF
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
PD-95262B
IRF5803PbF
HEXFET© Power MOSFET
o Itr Low n-R istan
.EciasnePMoesTa ce Voss Rnsion)max(mf2) Ir:
-40V 112@VGs = -10V -3.4A
0 Surface Mount 190@V 4 5V 2 7A
0 Available in Tape & Reel GS - - . - .
0 Low Gate Charge
0 Lead-Free
o Halogen-Free
Description D l ' '6 D titiy'iiiii::s,
These P-channel HEXFET© Power MOSFETs from J _ r, Jic.ii,t.iC,/iCi' ",
International Rectifier utilize advanced processing DD] )tl, E D J“ " "
techniques to achieve the extremely low on-resistance 4
per silicon area. This benefit provides the designer Gma 4 s
with an extremely efficient device for use in battery and
load management applications. Top View TSOP-6
The TSOP-6 package with its customized leadframe
produces a HEXFETO power MOSFET with RDS(On)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is ata premium. It's unique thermal design and RDs(on)
reduction enablesa current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ -10V -3.4
ID @ TA-- 70°C Continuous Drain Current, Ves @ -10V -2.7 A
IDM Pulsed Drain Current (D -27
PD @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
Vss Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-AmbientG) 62.5 °C/W
1
04/20/10

IRF5803PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = -1mA
. . . - - 112 Vas = -1OV, ID = -3.4 (D
R Static Drain-to-Source On-Resistance
DS(on) - - 190 mn Vas = -4.5v, ID = -2.7A ©
Vesah) Gate Threshold Voltage -1.0 - -3.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 4.0 - - S Vos = -10V, ID = -3.4A
loss Drain-to-Source Leakage Current - - -10 PA 1hos = -32V, VGS = 0V
- - -25 Ihos = -32V, l/ss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 20V
09 Total Gate Charge - 25 37 ID = -3.4A
Qgs Gate-to-Source Charge - 4.5 6.8 nC VDs = -20V
di Gate-to-Drain ("Miller") Charge - 3.5 5.3 Vas = -10V
tdmn) Turn-On Delay Time - 43 - VDD = -20V ©
tr Rise Time - 550 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 88 - Re = 6.09
if Fall Time - 50 - Vas = -10V
Ciss Input Capacitance - 1110 - Vas = 0V
COSS Output Capacitance - 93 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 73 - f = 100kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 O MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 27 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V ©
tn Reverse Recovery Time - 27 40 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 34 50 nC di/dt = -100A/us ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2

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