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IRF5803IRN/a7450avai-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
IRF5803TRIORN/a1069avai-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
IRF5803TRIRN/a54000avai-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package


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IRF5803-IRF5803TR
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
:raRIectifier
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Description
These P-channel HEXFET© Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
PD-94015
IRF5803
HEXFET0 Power MOSFET
VDss RDS(on) max (mn) ID
MOV 112@sz = -10V -3.4A
190@VGS = -4.5V -2.7A
[,[1- -e D
[mi LED
produces a HEXFET0 power MOSFET with RDSW Top View TSOP-6
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's uniquethermal design and RDSWD
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -10V -3.4
ID @ TA-- 70°C Continuous Drain Current, VGS © -10V -2.7 A
IDM Pulsed Drain Current co -27
Po @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70''C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage 1 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 62.5 °C/W
1

03/05/01
IRF5803 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.03 - V/°C Reference to 25''C, ID = -1mA
. . . - - 112 Was = -1OV, ID = -3.4 ©
R Static Drain-to-Source On-Resistance
DS(on) - - 190 mn VGS = -4.5V, ID = -2.7A ©
VGSM Gate Threshold Voltage -1.0 - -3.0 V Vos = l/cs, ID = -250pA
gfs Forward Transconductance 4.0 - - S Vos = -10V, ID = -3.4A
loss Drain-to-Source Leakage Current - - -10 HA Vros = -32V, VGS = 0V
- - -25 Ws = -32V, Vss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 25 37 ID = -3MA
Qgs Gate-to-Source Charge - 4.5 6.8 nC Vros = -20V
di Gate-to-Drain ("Miller") Charge - 3.5 5.3 Was = -10V
tdmn) Turn-On Delay Time - 43 - VDD = -20V ©
t, Rise Time - 550 - ns ID = -1.0A
tam) Turn-Off Delay Time - 88 - Rs = 6.09
tt Fall Time - 50 - VGS = -10V
Ciss Input Capacitance - 1110 - VGs = 0V
Cass Output Capacitance - 93 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 73 - f = 100kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 0 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current -27 integral reverse G
(Body Diode) CD - - p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, N/ss = 0V ©
tn Reverse Recovery Time - 27 40 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 34 50 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width 3 400ps; duty cycle f 2%.
2

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