IC Phoenix
 
Home ›  II25 > IRF540Z-IRF540ZPBF-IRF540ZS,100V Single N-Channel HEXFET Power MOSFET in a D2Pak package
IRF540Z-IRF540ZPBF-IRF540ZS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF540ZIRN/a27avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF540ZPBFIRN/a100avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF540ZSIRN/a4800avai100V Single N-Channel HEXFET Power MOSFET in a D2Pak package


IRF540ZS ,100V Single N-Channel HEXFET Power MOSFET in a D2Pak packageapplications.IRF540ZIRF540ZS IRF540ZLAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain C ..
IRF541 ,N-Channel Power MOSFETs/ 27 A/ 60-100VI _ -- "" - A - --B-. _.---..- - - -u. - - _ ----- ---- _ - FAIRCHILD SEMICONDUCTOR at; 'iiiiIsc ..
IRF542 ,N-Channel Power MOSFETs/ 27 A/ 60-100VElectrical Characteristics (T c --. 25°C unless otherwise noted) Symbol l Characteristic Min Max U ..
IRF543 ,N-Channel Power MOSFETs/ 27 A/ 60-100Vapplications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid ..
IRF550A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.04DS(on) Rugged Gate Oxide Te ..
IRF5800 ,-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packagePD - 93850AIRF5800HEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETV = -30VDS ..
IS62LV1024LL-55HI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-55Q , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-55QI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-70H , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-70H , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-70QI , 128K x 8 LOW POWER AND LOW Vcc


IRF540Z-IRF540ZPBF-IRF540ZS
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. I PD - 94758
Internati(ona
.3 R ti fi AUTOMOTIVE MOSFET IRF540Z
TOR SC I Ier IRF540ZS
IRF540ZL
Features HEXFET© Power MOSFET
. Advanced Process Technology
o Ultra Low On-Resistance D
q 175°C Operating Temperature VDSS = 100V
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax " r, RDS(on) = 26.5mQ
Description
Specifically designed for Automotive applications, s ID = 36A
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremelylowon-
resistance per silicon area. Additional features of
this design area175°Cjunctionoperatingtempera- .1 (ijt) 4i,tt
ture, fast switching speed and improved repetitive "i5il'r' h, * ,
avalanche rating . These features combine to make ’\. _'. _
this design an extremely efficient and reliable device .
for use in Automotive applications and a wide variety TO-220AB D2Pak TO 262
of other applications. IRF540Z IRF540ZS IRF540ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 36
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 25 A
IDM Pulsed Dram Current co 140
PD @Tc = 25°C Power Dissipation 92 W
Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage 1 20 V
E AS (Thermally limited) Single Pulse Avalanche Energy© 83 mJ
EAS (Tested ) Single Pulse Avalanche Energy TestedNalue © 120
Avalanche Current LO
IAR See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw co 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .64 "C/W
Rocs Case-to-Sink, Flat Greased Surface (D 0.50 -
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) - 40
1

10/31/03
|RF54OZ/S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.093 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 21 26.5 mg VGS = 10V, ID = 22A ©
Vesoh) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gfs FonNard Transconductance 36 - - V Vros = 25V, ID = 22A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, VGS = 0V
- - 250 Vos = 100V, VGS = 0V, T, = 125°C
' Gate-to-Source Forward Leakage - - 200 nA VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
A Total Gate Charge - 42 63 ID = 22A
As Gate-to-Source Charge - 9.7 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 15 - VGS = 10V ©
tum") Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time - 51 - ID = 22A
tum) Turn-Off Delay Time - 43 - ns Rs = 12 Q
t, Fall Time - 39 - VGS = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1770 - VGS = 0V
Coss Output Capacitance - 180 - Vos = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Coss Output Capacitance - 730 - Vss = 0V, Vos = 1.0V, I = 1.0MHz
Coss Output Capacitance - 110 - VGS = 0V, Vros = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 170 - VGS = 0V, Vos = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 140 integral reverse a
(Body Diode) co p-n junction diode. cl
VSD Diode Forward Voltage - - 1.3 V To = 25°C, IS = 22A, VGs = 0V ©
trr Reverse Recovery Time - 33 50 ns T J = 25°C, IF = 22A, VDD = 50V
Qrr Reverse Recovery Charge - 41 62 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED