IRF540 ,POWER MOSFETIRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220LOW GATE CHARGE STripFET™ II POWER MOSFETTYPE V R IDSS D ..
IRF540A ,N-CHANNEL POWER MOSFETIRF540AAdvanced Power MOSFET
IRF540FI ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitIRF530 IRF530FIV Drain-source Voltage (V =0) 100 ..
IRF540N ,33A, 100V, 0.040 Ohm, N-Channel, Power MOSFETPD - 91341BIRF540N®HEXFET Power MOSFET Advanced Process TechnologyDV = 100V Ultra Low On-Resistan ..
IRF540N. ,33A, 100V, 0.040 Ohm, N-Channel, Power MOSFETapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF540NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91341BIRF540N®HEXFET Power MOSFET Advanced Process TechnologyDV = 100V Ultra Low On-Resistan ..
IS62C256AL-25TI , 32K x 8 LOW POWER CMOS STATIC RAM
IS62C256AL-25UI , 32K x 8 LOW POWER CMOS STATIC RAM
IS62C256AL-45ULI , 32K x 8 LOW POWER CMOS STATIC RAM
IS62C256AL-45ULI , 32K x 8 LOW POWER CMOS STATIC RAM
IS62C256AL-45ULI , 32K x 8 LOW POWER CMOS STATIC RAM
IS62LV1024L-45HI , 128K x 8 LOW POWER AND LOW Vcc
IRF540
POWER MOSFET
1/8February 2003
IRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. 1) ISD ≤22A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
IRF540
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/8
IRF540SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
IRF540Output Characteristics
5/8
IRF540Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
