IRF530PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF530PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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IRF530-IRF530PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.307O
Irttettatiip,t,tal
BMit Rectifier IRF530 .
HEXFET*) Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated D -
0 175°C Operating Temperature Voss - 100V
q FastSwitching
0 Ease of Paralleling r, RDS(on) = 0.16f2
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO~220AB
Absolute Maximum Ratings
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, Vss © 10 V 14
lo @ To = 100°C Continuous Drain Current, Vas @ 10 V 10 A
IDM Pulsed Drain Current (O _ 56
Po @ Tc = 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 WPC
Vos Gate-to-Source Voltage d:20 V
EAS Single Pulse Avalanche Energy © 69 md
IAR Avalanche Current (i) 14 A
EAR Repetitive Avalanche Energy OD 8.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Tu Operating Junction and ..55 to +175
Tsro Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nom)
Thermal Resistance T
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 1 .7 7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - _ °C/W
Flam Junction-to-Ambient - - 62
|RF530
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V VGs=OV, ID: 2501sA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - VPC Reference to 25°C. In: 1 mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.16 Q Vas=10V, lis--8.4A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 250WA
gts Forward Transconductanqe 5.1 - - S Vos=50V, ID=8.4A ©
loss Drain-to-Source Leakage Current - - 25 WA VDs=100V, Vss=OV
- - 250 Vos=80V. Var=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vas=-20V
Qg Total Gate Charge - - 26 ID=14A
Qgs Gate-to-Source Charge - - 5,5 no VDs=8OV
cu, Gate-to-Drain ("Miller") Charge - - 11 Vas=10V See Fig. 6 and 13 (9
tdion) Tum-On Delay Time - 10 - VDD=50V
tr Rise Time - 34 - ns |D=14A
tum") Tum-Off Delay Time - 23 - Re=12g2
tf Fall Time - 24 - RD=3.6£2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tt,',t(r('J.ltiei.') n
nH from package iii)
Ls Internal Source Inductance - 7.5 - and center of
die contact 5
Ciss Input Capacitance - 670 - Ves=0V
Coss Output Capacitance - 250 - pF Vos=25V
Crss Reverse Transfer Capacitance - 60 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the L,-i:
ISM Pulsed Source Current - - 56 integral reverse G EL
(Body Diode) G) p-n junction diode. s
V50 Diode Forward Voltage - - 2.5 V TJ=25°C, ls=14A, VGS=0V ©
trr Reverse Recovery Time - 150 280 ns TJ=25°C, lF=14A
Q" Reverse Recovery Charge - 0.85 1.7 WC) di/dt=100A/ps (4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
oo Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V. starting TJ=25°C, L--528WH
Re=25£2, lAs=14A (See Figure 12)
co Isos14A, di/dts140A/ps, VDDSV(BR)DSS,
TJS175°C
(4) Pulse width 5 300 us; duty cycle S.2%,
