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IRF5210LIRN/a1429avai-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
IRF5210SIRN/a4800avai-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF5210L-IRF5210S
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 91405C
IRF52'10S/L
HEXFET0 Power MOSFET
0 Advanced Process Technology
0 Surface Mount (IRF5210S) D VDSS = -100V
0 Low-profilethrough-hole(lRF5210L)
o 175 C O.tr.ating Temperature . Lg RDS(on) = 0.069
0 Fast Switching
o P-Channel -
0 Fully Avalanche Rated s 'D - MOA
Description
Fifth Generation HEXFETs from International Rectferutilize
advanced processing techniques to achieve extremely low
on-resistance persilicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designerwith an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes upto HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
anyexistingsurface mountpackage.The D2Pakissuitable D 2 Pak TO-262
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, VGS @ -10VS -40
ID @ To = 100°C Continuous Drain Current, Ves @ -10V© -29 A
IDM Pulsed Drain Current (D6) -140
Pro @TA = 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1 3 W/°C
VGS Gate-to-Source Voltage i 20 V
EN; Single Pulse Avalanche Energy©© 780 m1
IAR Avalanche Current0) -21 A
EAR Repetitive Avalanche Energy© 20 m]
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75 a
Ras Junction-to-Ambient ( PCB Mounted,steady-state)" - 40 C/W

5/13/98
IRF5210S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGs = 0V, lo = -250pA
AVRoam Static Drain-to-Source On-Resistance - - 0.06 n VGS = -10V, ID = -24A (ii)
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vros = VGs, ID = -250pA
gts Forward Transconductance 10 - - S VDs = -50V, ID = -21A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -100V, VGS = 0V
- - -250 I/os = -80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -1OO VGS = -20V
ck Total Gate Charge - - 180 ID = -21A
As Gate-to-Source Charge - - 25 nC VDs = -80V
di Gate-to-Drain ("Miller") Charge - - 97 Vss = -10V, See Fig. 6 and 13 C1)6)
tdwn) Turn-On Delay Time - 17 - VDD = -50V
tr RiseTime - 86 - ns ID = -21A
tu(ott) Turn-Off Delay Time - 79 - Rs = 2.59
tf FallTime - 81 - RD = 2.49, See Fig. 10 ©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 2700 - VGS = 0V
Cess Output Capacitance - 790 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 450 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymbol D
(Body Diode) - - -40 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - -140 p-n junction diode. S
VSD Diode Forward Voltage - - -1.6 V TJ = 25°C, Is = -24A, VGS = 0V ©
trr Reverse Recovery Time - 170 260 ns T: = 25°C, I; = -21A
Qrr Reverse Recovery Charge - 1.2 1.8 pC di/dt = -100Alps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To-- 25°C, L = 3.1mH
Rs = 259, IAS-- -21A. (See Figure 12)
© Iso S -21A, di/dt S -480/Ups, VDD S V(BR)DSS!
TJ I 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

© Pulse width S 300ps; duty cycle f 2%.
© Uses IRF5210 data and test conditions
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