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IRF520VLIRN/a4150avai100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF520VSIRN/a250avai100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF520VS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF520VL-IRF520VS
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 94306
IRF520VS
IRF520VL
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
Optimized for SMPS Applications
VDSS = 100V
A RDS(0n) = 0.1659
ID = 9.6A
Description
Advanced HEXFET6 Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast . _
switching speed and ruggedized device design that HEXFET power tgit
MOSFETs are well known for, provides the designer with an extremely . '
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the D2Pak TO-262
lowest possible ortreti.st.ance in any existihg surface mount package. The IRF520VS IRF520VL
D2Pak IS suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
Thethrough-hole version (IRF520VL) is available forlow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V © 9.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V © 6.8 A
IDM Pulsed Drain Current COO) 37
Pro @Tc = 25°C Power Dissipation 44
Linear Derating Factor 0.29 W/°C
Ves Gate-to-Source Voltage 1 20 V
IAR Avalanche CurrentC) 9.2 A
EAR Repetitive Avalanche EnergyC) 4.4 mJ
dv/dt Peak Diode Recovery dv/dt (3)OD 7.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 3.4 o C AN
RQJA Junction-to-Ambient (PCB Mounted, steady state)" - 40
1
01/18/02

IRF520VS/lRF520VL
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V N/ss = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25''C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.165 n VGs = 10V, ID = 5.5A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = I/cs, ID = 250pA
gts Forward Transconductance 1.9 - - S Vos = 50V, ID = 5.5A©©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, VGS = 0V
- - 250 VDs = 80V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 22 ID = 9.2A
Q95 Gate-to-Source Charge -- - 5.2 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 7.0 VGS = 10V, See Fig. 6 and 13©
tdwn) Turn-On Delay Time - 6.9 - VDD = 50V
tr Rise Time - 23 - ns ID = 9.2A
tam) Turn-Off Delay Time - 30 - Rs = 189
tt Fall Time - 24 - VGs = 10V, See Fig. 10 Ei)(t)
u, Internal Drain Inductance - 4.5 - Between lsad, D
nH 6mm (0.25m.) Q: )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 560 - N/ss = 0V
Cass Output Capacitance - 81 - VDS = 25V
Crss Reverse Transfer Capacitance - 10 - pF f = 1.0MHz, See Fig. 5 ©
EAS Single Pulse Avalanche Energy©© - 1506) 44© mJ lAs = 9.2A, L = 1.0mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - g 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 37 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 9.2A, VGS = 0V (i9
trr Reverse Recovery Time - 83 120 ns TJ = 25°C, IF = 9.2A
Gr Reverse Recovery Charge - 220 330 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting TJ = 25°C, L = 1.0mH
Rs = 25n, IAS = 9.2A, VGS=1OV (See Figure 12)
© ISD S 9.2A, di/dt S 360A/ps, VDD f V(BR)DSSI
TJS175°C
co Pulse width s 400ps; duty cycle I 2%.

© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C '
© Uses IRF520V data and test conditions.
”When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994

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