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IRF4905LIRN/a3000avai-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
IRF4905SIRN/a6000avai-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
IRF4905STRLIRN/a765avai-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package


IRF4905S ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF4905SPBF , HEXFET Power MOSFET
IRF4905STRL ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1478AIRF4905S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF4905S)V ..
IRF4905STRLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF4905LPbFIRF4905SPbFGD SGate Drain SourceAbsolute Maximum RatingsParameter Max. Unit ..
IRF4905STRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures HEXFET Power MOSFETO Advanced Process TechnologyDO Ultra Low On-ResistanceV = -55VDSSO 150 ..
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IRF4905L-IRF4905S-IRF4905STRL
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
PD - 9.1478A
IRF4905S/L
HEXFET® Power MOSFET
International
TOR, Rectifier
Advanced Process Technology
Surface Mount (IRF4905S) D
Low-profile through-hole (IRF4905L)
VDSS = -55V
175°C Operating Temperature
Fast Switching
P-Channel
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
effcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max.
RDS(on) = 0.029
ID = -74A
ID @ Tc = 25°C
Continuous Drain Current, VGS @ -10V6) -74
ID @ TC =100°C
Continuous Drain Current, VGS @ -10VS
Pulsed Drain Current cos
PD @TA = 25°C
Power Dissipation
PD @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy©©
Avalanche CurrentCD
Repetitive Avalanche Energy00
Peak Diode Recovery dv/dt @6)
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted/steady-state)"

8/25/97
IRF4905S/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, b = -250uA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coeffcient - -0.05 - V/°C Reference to 25°C, ID = -ImAS
RDs(on) Static Drain-to-Source On-Resistance - - 0.02 f2 VGs = -10V, ID = -38A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 21 - - S Ws = -25V, ID = -38A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -55V, VGS = 0V
- - -250 l/os = -44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
q, Total Gate Charge - - 180 ID = -38A
Qgs Gate-to-Source Charge - - 32 nC I/os = -44V
Ad Gate-to-Drain ("Miller") Charge - - 86 Ws = -10V, See Fig. 6 and 13 (ii)6)
tum) Turn-On Delay Time - 18 - VDD = -28V
tr RiseTime - 99 - ns ID = -38A
tam) Turn-Off Delay Time - 61 - Rs = 2.59
tr FalITime - 96 - RD = 0.729, See Fig. 10 GD
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 3400 - VGs = 0V
Coss Output Capacitance - 1400 - pF Ws = -25V
Crss Reverse Transfer Capacitance - 640 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol D
. - - -74 .
(Body Diode) A showing the L-,,
ISM Pulsed Source Current integral reverse G LE“
(Body Diode) C) - - -260 p-n junction diode. S
VSD Diode Forward Voltage - - -1.6 V Tu = 25°C, Is = -38A, VGs = 0V G)
trr Reverse Recovery Time - 89 130 ns Tu = 25°C, IF = -38A
Qrr Reverse Recovery Charge - 230 350 nC di/dt = -100A/ps C4)S
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 1.3mH (9 Uses IRF4905 data and test conditions
RG = 259, IAS = -38A. (See Figure 12)
© ISD S -38A, di/dt f -270A/ps, VDD S V(BR)ross,
T J E 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

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