IRF3805S-7P ,55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak packageapplications. Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CCon ..
IRF3805SPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2TO-220ABD Pak TO-262IRF3805PbFIRF3805SPbF IRF3805LPbFAbsolute Maximum RatingsParamete ..
IRF3808 ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures of this HEXFET power MOSFET are a 175°Cjunction operating temperature, low RθJC, fast swit ..
IRF3808. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF3808PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 94291BIRF3808AUTOMOTIVE MOSFET®HEXFET Power MOSFETTypical
IRF3808S ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61SP6464-6TQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61VPS51236A-200TQ , 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61WV12816DBLL-10TLI , 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IRF3805S-7P
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-263CA package
lnterreionc)
" . . _lNNflIiAtHfii%RA,
IQR Rectifier JNNf'.1iAudfiNN8
Features
. Advanced ProcessTechnology HEXFET® Power MOSFET
q Ultra Low On-Resistance
. 175°C OperatingTemperature VDSS = 55V
. Fast Switching
o Repetitive Avalanche Allowed up to ijax G RDS(on) = 2.6mfP
. Lead-Free
s ID = 160A
Description s (Pin 2, 3, 5, 6, 7)
This H EXFET6 Power MOSFET utilizes the latest G (Pin 1)
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved x , l
. . . . 1
repetitive avalanche rating . These features 1
combineto makethisdesign an extremely efficient ii1l
and reliable device for use in a wide variety of
applications. D2Pak7 Pin TO-263CA 7 Pin
IRF3805S-7PPbF IRF3805L-7PPbF
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 240 A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V (See Fig. 9) 170
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 160
IDM Pulsed Drain Current CD 1000
PD @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 w/°c
VGS Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 440 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 680
'AR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy s mJ
To Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N'm)
Thermal Res stance
Parameter Typ. Max. Units
Roc Junction-to-Case - 0.50 °C/W
Recs Case-to-Sink, Flat, Greased Surface O.50 --
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state) C0© - 40
HEXFET® is a registered trademark of International Rectifier.
liAlvvww.i-mctom@2013mternationalRectitier SubmitDatasheetFeedback October25,2013
I&‘ZR JitWftItBMnl,rW'2R't©
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vas = 0V, ID = 250pA
ABN/rss/AT: Breakdown Voltage Temp. Coefficient - 0.05 - VPC Reference to 25°C, lo = 1mA
RDS(on) SMD Static Drain-to-Source On-Resistance - 2.0 2.6 mn Vss = 10V, ID = 140A OD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 110 --- --.- S Vos = 25V, ID = 140A
loss Drain-to-Source Leakage Current -- -- 20 pA Vos = 55V, Ves = 0V
-- -- 250 Vos = 55V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
09 Total Gate Charge - 130 200 nC ID = 140A
095 Gate-to-Source Charge - 53 - Vos = 44V
di Gate-to-Drain ("Miller") Charge - 49 - Vas = 10V ©
td(on) Turn-On Delay Time - 23 - ns VDD = 28V
tr Rise Time - 130 - ID = 140A
td(off) Turn-Off Delay Time - 80 - Rs = 2.49
t, Fall Time - 52 - Vss = 10V ©
Lo Internal Drain Inductance - 4.5 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance -- 7.5 -- from package
and center of die contact
Ciss Input Capacitance - 7820 - pF Vss = 0V
Coss Output Capacitance - 1260 - Vos = 25V
Crss Reverse Transfer Capacitance - 610 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 4310 - Vas = 0V, l/ross = 1.0V, f = 1.0MHz
Coss Output Capacitance - 980 - Vas = 0V, l/ross = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1540 - Vas = 0V, Vos = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 240 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 1000 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V To = 25°C, IS = 140A, VGs = 0V ©
trr Reverse Recovery Time - 45 68 ns TJ = 25''C, IF = 140A, VDD = 28V
l Reverse Recovery Charge - 35 53 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig.11).avalanche performance.
© Limited by Tomax, starting Tu = 25oC, © This value determined from sample failure population. 100%
L=0.043mH, Ra = 25f2, 'AS = 140A, Vas =10V. tested to this value in production.
Part not recommended for use above this value. co This is applied to D2Pak, when mounted on 1" square PCB
© Pulse width S 1.0ms; duty cycle S 2%. ( FR-4 or G-10 Material ). For recommended footprint and
co Cass eff. is a fixed capacitance that gives the same soldering techniques refer to application note #AN-994.
charging time as Coss while Vos is rising from 0 to 80% Ro is measured at T, of approximately 90°C.
Voss. © Solder mounted on IMS substrate.
8 ©2013InternationalRectifier Submit Datasheet Feedback October 25, 2013
