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IRF3709ZPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD -95465
lmemOHQWO' IF1F3709ZPbF
TOR Rectifier llRF3709ZSPbF
IRF3709ZLPbF
Applications HEXFET® Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power VDSS RDS(on) max Clg
q Lead-Free 30V 6.3mQ 17nC
q Low RDS(on) at 4.5V Vss 's., "
Benefits "iii):) . 'i'i'i'iaii)), siijit
0 Low Gate Charge .‘ l
q Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak T0262
IRF3709Z lRF3709ZS IRF37092L
Absolute Maximum Ratings
Parameter Max. Units
l/rss Drain-to-Source Voltage 30 V
1/ss Gate-to-Source Voltage t 20
ID © To = 25°C Continuous Drain Current, I/ss © 10V 87© A
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 62©
IDM Pulsed Drain Current co 350
PD @Tc = 25°C Maximum Power Dissipation 79 W
PD @TC = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.89 °C/W
ROJA Junction-to-Ambient (PCB Mount) s - 40
Notes OD through co are on page 12
1
6/30/04
IRF3709Z/S/LPbF International
TOR ilectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.0 6.3 mf2 Vas = 10V, ID = 21A ©
- 6.2 7.8 Vas = 4.5V, ID = 17A ©
Vesuh) Gate Threshold Voltage 1.35 __- 2.25 v I/rs = Vss, ID = 250pA
AVGS(lh)/ATJ Gate Threshold Voltage Coefficient - -5.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 vDs = 24V, Vss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 88 - - S I/rs = 15V, ID = 17A
Qg Total Gate Charge - 17 26
0951 Pre-Vth Gate-to-Source Charge - 4.4 - Vros = 15V
0932 Post-Vth Gate-to-Source Charge - 1.7 - nC Vss = 4.5V
di Gate-to-Drain Charge - 6.0 - ID = 17A
ngd, Gate Charge Overdrive - 4.9 - See Fig. 14a&b
st Switch Charge (Clgs2 + di) - 7.7 -
Qoss Output Charge - 11 - nC Vos = 16V, Ves = 0V
td(on) Turn-On Delay Time - 13 - VDD = 15V, I/es = 4.5V ©
t, Rise Time - 41 - ID = 17A
tum) Turn-Off Delay Time - 16 - ns Clamped Inductive Load
tf Fall Time - 4.7 -
Ciss Input Capacitance - 2130 - Vss = 0V
Coss Output Capacitance - 450 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS e 60
IAH rrent 17
EAR e nergy 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 87© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 350 integral reverse G
(Body Diode) CD p-n junction diode. s
Vso Diode Forward Voltage -.-.- --.- 1.0 V TJ = 25°C, ls = 17A, VGs = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 17A, VDD = 15V
er Reverse Recovery Charge - 6.2 9.3 nC di/dt = 100A/ps ©
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