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IRF3707ZCSTRRP
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95464A
1nterryoti.c.o,ryol |RF3707ZCSPbF
ISER Redntler lRF3707ZCLPbF
Applications HEXFET© Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max tilg
o Lead-Free 30V 9dimf2 9.7nC
Benefits 'git,
. Low RDS(on) at 4.5V VGS "ii-'j'it'it 'Rie' V
o Ultra-Low Gate Impedance _ i V
o Fully Characterized Avalanche Voltage
and Current szak TO-262
IRF3707ZCSPbF |RF3707ZCLPbF
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage i 20
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 59© A
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 42©
IBM Pulsed Drain Current (D 230
PD @Tc = 25°C Maximum Power Dissipation 57 W
PD @Tc = 100°C Maximum Power Dissipation 28
Linear Derating Factor 0.38 W/°C
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf'in (1.1 N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 2.653 ''C/W
ROJA Junction-to-Ambient (PCB Mount) © - 4O
Notes OD through © are on page 11
1
05/12/08
IRF3707ZCS/LPbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 mf2 Vss = 10V, ID = 21A OD
- 10 12.5 Vss=4.5V, ID: 17A ©
VGS(lh) Gate Threshold Voltage 1.35 1.80 2.25 V Vos = Vss, ID = 25pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient --- -5.3 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, l/ss = 0V
- - 150 Vos = 24V, l/ss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/as = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 81 - - S Vos = 15V, ID = 17A
Qg Total Gate Charge - 9.7 15
0951 Pre-Vth Gate-to-Source Charge - 2.8 - l/ns = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC Vss = 4.5V
di Gate-to-Drain Charge - 3.4 - ID = 17A
ngdr Gate Charge Overdrive -- 2.5 -- See Fig. 16
QSW Switch Charge (0952 + di) - 4.4 -
Qoss Output Charge -- 6.2 -- nC Vos = 16V, Vss = OV
tum) Turn-On Delay Time - 9.8 - VDD = 15V, l/ss = 4.5V ©
t, Rise Time - 41 - ID = 17A
tom Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 3.6 -
Ciss Input Capacitance - 1210 - Ves = 0V
Coss Output Capacitance - 260 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS se e ergy 40
IAR e rre 23
EAR e nergy 5.7
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current -- -- 59© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current --.- - 230 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 17A, l/tas = 0V ©
in Reverse Recovery Time - 14 21 ns TJ = 25°C, IF = 17A, VDD = 15V
er Reverse Recovery Charge - 5.2 7.8 nC di/dt = 100A/ps ©
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