IRF340 ,N-Channel Power MOSFETs/ 10A/ 350V/400Vapplications such as switching Dynamic dv/dt Ratingpower supplies, motor controls, inverters, chop ..
IRF3415 ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF3415L ,150V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF3415PBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91477DIRF3415®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 150VD ..
IRF3415S ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91509CIRF3415S/L®HEXFET Power MOSFETl Advanced Process TechnologyDV = 150Vl Surface Mount (IRF ..
IRF3415SPBF ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IS61LV6464-100TQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61NF12836-8.5TQ , 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
IS61NLF51236-6.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF51236-6.5B3I , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLP102418-200TQ , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP25672-200B1I , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IRF340
N-Channel Power MOSFETs/ 10A/ 350V/400V
International
IEZR Rectifier
REPE I I I I V E AVALANCHE AND dV/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
PartNumber BVDSS RDS(on) 1D
IRF340 400V 0559 10A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
PD- 90371
IRF34O
400V, N-CHANNEL
tr:--"-';;))
verse energy and diode recovery dv/dt capability. TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. a Repetitive Avalanche Ratings
They are well suited for applications such as switching I: Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, au- u Hermetically Sealed
dio amplifiers and high energy pulse circuits. " Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current IO
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 6.0 A
IDM Pulsed Drain Current C) 40
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 5.7 mJ
IAR Avalanche Current Cf) 10 A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF340 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.46 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.55 n VGS = 10V, ID = S0AC0
Resistance - - 0.63 VGS = 10V, ID =10A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250mA
gfs Forward Transconductance 4.9 - - S (V) VDS > 15V, IDS = 6.0A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=320V,VGS=0V
- - 250 HA VDs = 320V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 32 - 65 V68 = 10V, ID =10A
Qgs Gate-to-Source Charge 2.2 - 10 nC VDS = 200V
Qgd Gate-to-Drain ('Miller') Charge 14 - 41
td(on) Turn-On Delay Time - - 2 5 VDD =200V, ID =10A,
tr Rise Time - - 92 RG =9.lf2
tti(om Turn-Off Delay Time - - 79 ns
tf Fall Time - - 5 8
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1400 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 350 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 230 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - IO A
ISM Pulse Source Current (Body Diode) C) - - 40
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, IS = 10A, VGS = 0V co
trr Reverse Recovery Time - - 600 nS Tj = 25°C, IF = 10A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 5.6 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.0 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
