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IRF2805L-IRF2805S
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Typical Applications
. Climate Control
AUTOMOTIVE MOSFET
PD - 94428
lRF2805S
IRF2805L
HEXFET® Power MOSFET
o Electronic Braking
o VWndshield Wipers
Features
Advanced Process Technology
Ultra LowOn-Resistance G
175°C Operating Temperature
Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 4.7mQ
ID = 135A©
Description
Specifically designed for Automotive applications, this
HEXFET© Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features ofthis product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable szak TO-262
device foruse in Automotive applications and awide variety IRF2805S IRF2805L
of other applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 135©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 96© A
IDM Pulsed Drain Current CD 700
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 380 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 1220
IAR Avalanche CurrentC) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75 °C/W
ReJA Junction-to-Ambient(PCB Mounted, steady state)" - 4O
HEXFET(R) is a registered trademark of International Rectfer.
06/1 0/02
IRF2805S/IRF2805L International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.06 - V/“C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.9 4.7 mn VGs = 10V, ID = 104A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
git Forward Transconductance 91 - - S Vos = 25V, ID = 104A
loss Drain-to-Source Leakage Current - - 20 HA VDS = MV, VGS = 0V
- - 250 Vros = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
% Total Gate Charge - 150 230 ID = 104A
095 Gate-to-Source Charge - 38 57 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 52 78 N/ss = 10V©
Mon) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 120 - ns ID = 104A
td(off) Turn-Off Delay Time - 68 - Rs = 2.59
tr Fall Time - 110 - VGS = 10V ©
LD Internal Drain Inductance - 4.5 - Between tad., D
nH 6mm (0.25in.) JC )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5110 - VGs = 0V
Coss Output Capacitance - 1190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6470 - VGS = 0V, N/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 860 - N/ss = 0V, Vros = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance S - 1600 - N/ss = 0V, VDs = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 175© A showing the
ISM Pulsed Source Current - - 700 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 104A, VGs = 0V ©
trr Reverse Recovery Time - 80 120 ns T: = 25°C, IF = 104A
Qrr Reverse Recovery Charge - 290 430 nC di/dt=100A/ps Ei)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting TJ = 25°C, L = 0.08mH
(S) Cass eff. is a foaed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
Rs = 25O, MS = 104A. (See Figure 12). junction temperature. Package limitation current is 75A.
© ISDS 104A, di/dt S 240A/ps, VDDS V(BR)DSS! © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
TJ f 175°C avalanche performance.
© Pulse width g 400ps; duty cycle 3 2%. This value determined from sample failure population. 100%
tested to this value in production.
2
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