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IRF2804 -IRF2804.-IRF2804L-IRF2804S
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94436C
International IRF2804
TOR Rectifier AUTOMOTIVE MOSFET
" IRF2804S
IRF2804L
Features HEXFET© Power MOSFET
. Advanced Process Technology D
. Ultra LowOn-Resistance VDSS = 40V
. 175°C Operating Temperature
. Fast Switching RDS(on) = 2.0mfP
. Repetitive Avalanche Allowed up to TImax G
Description s ID = 75A
SpeaTcallydesigned forAutomotive applications,
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features t, P'
of this design are a 175°C junction operating i'1i'iiiit
temperature, fast switching speed and improved \_ '_'
repetitive avalanche rating . These features com- _
bine to make this design an extremely efficient
and reliable device for use in Automotive applica- TO-ZZOAB D2Pak TO-262
tions and a wide variety of other applications. IRF2804 IRF2804S IRF2804L
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 280 A
In @ To = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 200
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 75
IDM Pulsed Drain Current C) 1080
PD @Tc = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/''C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 670 ml
EAS (tested) Single Pulse Avalanche Energy Tested Value C) 1160
IAR Avalanche Current C) See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © m J
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 Ibf- in (1 AN. m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.45 °C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 -
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
08/27/03
|RF2804/S/L
Static @ T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.031 - V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD Static Drain-to-Source On-Resistance - 1.5 2.0 mn VGS = 10V, ID = 75A ©
RDS(on) T0-220 Static Drain-to-Source On-Resistance - 1.8 2.3 VGS = 10V, b = 75A ©
VSSith) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGS, b = 250pA
gfs Forward Transconductance 130 - - S Ws = 10V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 40V, VGS = 0V
- - 250 Vos = 40V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
q, Total Gate Charge - 160 240 nC ID = 75A
095 Gate-to-Source Charge - 41 62 l/ns = 32V
di Gate-to-Drain ("Miller") Charge - 66 99 VGS = 10V (9
lemon) Turn-On Delay Time - 13 - ns VDD = 20V
t, Rise Time - 120 - ID = 75A
lam) Turn-Off Delay Time - 130 - Rs = 2.59
" Fall Time - 130 - Vss = ION/ ©
Lo Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.) (__/si)
Ls Internal Source Inductance - 7.5 - from package (lr, "
and center of die contact s
Ciss Input Capacitance - 6450 - pF VGs = 0V
Coss Output Capacitance - 1690 - Ws = 25V
Crss Reverse Transfer Capacitance - 840 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 5350 - Vss = 0V, Ws = 1.0V, f = 1.0MHz
Cass Output Capacitance - 1520 - Vss = 0V, Ws = 32V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 2210 - VGS = 0V, Vos = 0V to 32V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 280 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 1080 integral reverse G
(Body Diode) C) p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 v TJ = 25°C. Is = 75A, VGs = 0V ©
trr Reverse Recovery Time - 56 84 ns Tu = 25°C, IF = 75A, VDD = 20V
Qrr Reverse Recovery Charge - 67 100 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting Tu = 25°C,
L=0.24mH, RG = 259, IAS = 75A, VGS =10V.
Part not recommended for use above this value.
© ISD S 75A, di/dt S 220A/ps, VDD S V(BR)css,
TJ f 175°C.
© Pulse width 3 1.0ms; duty cycle S 2%.
© Cass eff. is a
Ftxed capacitance that gives the same
© Limited by Tumax , see Fig.12a, 12b, 15, 16 tor typical repetitive
avalanche performance.
co This value determined from sample failure population. 100%
tested to this value in production.
This is applied to DZPak, when mounted on 1" square PCB
( FR-4 or G-IO Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
© Max RDSWD for D2Pak and TO-262 (SMD) devices.
charging time as Cos,S while Vos is rising from 0 to 80%
