IRF250 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.PD - 90338EIRF250REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6766HEXFET TRANSISTORS JANTXV2N6766 ..
IRF2804 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures Advanced Process TechnologyDV = 40V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IRF2804. ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
IRF2804L ,40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications,®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel ..
IRF2804LPBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.IRF2804PbF IRF2804SPbF IRF2804LPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T = ..
IRF2804PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures® Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175°C Operatin ..
IS61LV5128-15T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10BLI , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10K , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-12T , 512K x 8 HIGH-SPEED CMOS STATIC RAM
IRF250
N-Channel Power MOSFETs/ 30A/ 150V/200V
PD - 90338E
International
IEZR Rectifier IRF250
REPETITIVE AVALANCHEAND dv/dt RATED J AN TX2N67 66
HEXFET®TRANSISTORS JANTXV2N6766
THRU-HOLE (TO-204AA/AE) TlRElF:MlrlL-lPlRF-19500/543l
200V, N-CHANNEL
Product Summary t,; 'ut:-J)
Part Number anss RDS(on) In (Cr-rr-e-lie.!
1RF250 200V 0.0859 30A l“ wild
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. TO-3
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature El Repetitive Avalanche Ratings
stability of the electrical parameters. I: Dynamic dv/dt Rating
They are well suited for applications such as switching u Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio II Simple Drive Requirements
amplifiers and high energy pulse circuits. u Ease ofParalleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 30
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 19 A
IDM Pulsed Drain Current C) 120
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 500 m1
IAR Avalanche Current Cf) 30 A
EAR Repetitive Avalanche Energy co 15 m.)
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5 (typical) g
For footnotes refer to the last page
1
01/22/01
IRF250 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.29 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.085 n VGS = 10V, ID =19A®
Resistance - - 0.090 VGS =10V, ID =30A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 9.0 - - S (U) VDS > 15V, IDS =19A©
IDSS Zero Gate Voltage Drain Current - - 25 VDs=160V,VGs=0V
- - 250 HA VDS =160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGS =20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS =-20V
Qg Total Gate Charge 55 - l 15 VGS =10V, ID=3OA
Qgs Gate-to-Source Charge 8 - 22 nC VDS =100V
Qgd Gate-to-Drain ('Miller') Charge 30 - 60
td(on) Turn-On Delay Time - - 3 5 VDD =100V, ID =30A,
tr Rise Time - - 190 RG =2.35f2
tti(om Turn-Off Delay Time - - 170 n S
tf Fall Time - - 130
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 3500 VGS = 0V, VDS =25V
Cogs Output Capacitance - 700 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - l 10 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 30 A
ISM Pulse Source Current (Body Diode) C) - - 120
VSD Diode Forward Voltage - - 1.9 V Tj = 25°C, Is =30A, VGS = 0V co
trr Reverse Recovery Time - - 950 nS Tj = 25°C, IF = 30A, di/dt SlOOA/us
QRR Reverse Recovery Charge - - 9.0 pc VDD S50V co
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 0.83 'C/W
Rth] A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
