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IRF1503
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-94526A
International
TOR Rectifier AUTOMOTIVE MOSFET IRF1 503
Typical Applications HEXFET8 Power MOSFET
. 14V Automotive Electrical Systems
. 14V Electronic Power Steering D
VDSS = 30V
Features
. Advanced Process Technology
Ultra Low On-Resistance G
175°C Operating Temperature
Fast Switching ID = 75A
Repetitive Avalanche Allowed up to Tjmax
A RDS(on) = 3.3m9.
Description
Specifically designed for Automotive applications, this
design of HEXFET6 Power MOSFETs utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this - V '.
HEXFET power MOSFET are a 175°C junction operating "RH l
temperature, fastswitching speed and improved repetitive \“43
avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V (Silicon limited) 240
ID © To = 100°C Continuous Drain Current, l/ss @ 10V (See Fig.9) 170 A
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V (Package limited) 75
IDM Pulsed Drain Current (D 960
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
I/tss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 510 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 980
IAR Avalanche Current© See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
Tu Operating Junction and -55 to + 175
Tsms Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rsx; Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface O.50 - °C/W
RNA Junction-to-Ambient - 62
1
12/11/02
IRF1503
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.028 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 2.6 3.3 mn Vss = 10V, ID = 140A ©
Vesah) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
gfs Forward Transconductance 75 - - S Vos = 25V, ID = 140A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 30V, N/ss = 0V
- - 250 Vos = 30V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
ch Total Gate Charge - 130 200 ID = 140A
Qgs Gate-to-Source Charge - 36 54 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 41 62 I/ss = 10V
td(on) Turn-On Delay Time - 17 - VDD = 15V
tr Rise Time - 130 - ns lo = 140A
tum) Turn-Off Delay Time - 59 - Rs = 2.59
tf Fall Time - 48 - Vss = 10V ©
. Between lead, D
Lo Internal Drain Inductance - 5.0 - nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 13 - . -
and center of die contact s
Ciss Input Capacitance - 5730 - VGs = 0V
Cass Output Capacitance - 2250 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 290 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 7580 - Vss = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 2290 - Vss = 0V, Vos = 24V, f = 1.0MHz
Coss eff. Effective Output Capacitance (9 - 3420 - VGS = 0V, VDS = 0V to 24V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 240 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 960 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 140A, l/tss = 0V ©
tr, Reverse Recovery Time - 71 110 ns TJ = 25°C, IF = 140A, VDD = 15V
G, Reverse RecoveryCharge - 110 170 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting To = 25°C, L = 0.049mH
FIG: 259, IAS-- 140A. (See Figure 12).
6) Pulse width S 400ps; duty cycle g 2%.
© Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from O to 80% VDss .
s Limited by Toma, , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
© This value determined from sample failure population. 100%
tested to this value in production.
