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IRF1405ZS-7P |IRF1405ZS7PIRN/a80avai55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak package


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IRF1405ZS-7P
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package
International mMlyClrt%9blMRRlid'
TOR Rectifier IrtlMryClrtWMul8NtlAp
HEXFET® Power MOSFET
Features
. Advanced Proces-s Technology D VDSS = 55V
. Ultra Low On-Resistance
. 175°C OperatingTemperature
. Fast Switching G RDS(on) = 4.9mfP
o Repetitive Avalanche Allowed up to Tjmax
. Lead-Free S lD = 120A
s (Pin 2, 3, 5, 6, 7)
Description G (Pin 1)
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combineto makethisdesign an extremely efficient
and reliable device for use in a wide variety of
. . D2Pak7Pin TO-263CA7Pin
applications.
Standard Pack
Base part number Package Type . Orderable Part Number Note
Form t2uantity
[RF1A95ZS-7PPbF- lube 59 lfF1ut05Zs-7PPbF EOL notice # 289
DZPak-7Pin
IRF1405ZS-7PPbF Tape and Reel Left 800 lRF1405ZSTHL7PP
lfF1405Z1z-7Pf2bF- T04163GA Tube 59 1f2F1AiXi21a-7PPbF- EOL notice # 288
Absolute Maximum Ratings
Parameter Max. Units
Ira © Tc = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 150
lro @ To = 100°C Continuous Drain Current, Vas @ 10V (See Fig. 9) 100 A
ID © To = 25°C Continuous Drain Current, Vss @ 10V (Pa3axrLirhta1) 120
IDM Pulsed Drain Current OD 590
Pro @Tc = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 0) 250 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 810
IAR Avalanche Current (D See FIg.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300(1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case g - 0.65 "C/W
RQJA Junction-to-Ambient (PCB Mount, steady state) C) - 40
HEXFET6 is a registered trademark of International Rectifier.
il © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014

IggR IRF1405ZSIL-7PPbF
Static © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vvm)oss Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250PA
ABVoss/ATs Breakdown Voltage Temp. Coefficient - 0.054 - V/°C Reference to 25°C, ID = 1mA
RDSW, SMD Static Drain-to-Source On-Resistance - 3.7 4.9 m9 Vas = 10V, ID = 88A ®
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
gfs Forward Transconductance 150 - - S Vos = 25V, ID = 88A
loss Drain-to-Source Leakage Current - - 20 Vos = 55V, Vas = 0V
- - 250 PA Vos = 55V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 Ves = 20V
Gate-to-Source Reverse Leakage - - -200 nA Vas = WN
q, Total Gate Charge - 150 230 ID = 88A
q, Gate-to-Source Charge - 37 - nC Vos = 44V
(h, Gate-to-Drain ("Miller") Charge - 64 - Vas = 10V (3)
tom) Turn-On Delay Time - 16 - VDD = 28V
t, Rise Time - 140 - ID = 88A
tam") Turn-Off Delay Time - 170 - ns Rs = 509
t, Fall Time - 130 - Vas = 10V Q)
Lo Internal Drain Inductance - 4.5 - nH Between lead,
6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package
and center of die contact
C.SS Input Capacitance - 5360 - Vas = 0V
Cass Output Capacitance - 1310 - Vus = 25V
Crss Reverse Transfer Capacitance - 340 - f = 1.0MH2, See Fig. 5
Coss Output Capacitance - 6080 - pF Vas = 0V, Vos = 1.0V, f = 1.0MH2
Coss Output Capacitance - 920 - Vas = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1700 - Vas = 0V, Vos = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
- - 150
(Body Diode) A showing the
ISM Pulsed Source Current 590 integral reverse G
(Body Diode) co p-njunction diode. s
V50 Diode Forward Voltage - - 1.3 V To = 25°C, IS = 88A, VGS = 0V 8)
t,, Reverse Recovery Time - 63 95 ns TJ = 25°C, IF = 88A, Va, = 28V
0,, Reverse Recovery Charge - 160 240 nC di/dt = 100A/ps (3)
Notes:
CD Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
© Limited by TJmax, starting To = 25°C, L=0.064mH, Rs = 259, hui; = 88A, l/css =1OV.
Part not recommended for use above this value.
Cs) Pulse width S 1.0ms; duty cycle f 2%.
© Coss eff. is a fixed capacitance that gives the same charging time as Coss while Vos is rising from O to 80% Voss.
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
© This value determined from sample failure population. 100% tested to this value in production.
© This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Re is measured at Tu of approximately 90°C.
© Solder mounted on IMS substrate.
© 2014 International Rectifier Submit Datasheet Feedback October 29, 2014

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