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IRF1404-IRF1404PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-91896F
International
TOR Rectifier llRF1404
Advanced Process Technology HEXFET8 Power MOSFET
Ultra Low On-Resistance D
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated G
Automotive Qualified (0101)
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
H EXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications including
automotive.
VDSS = 40V
. RDS(on) = 00040
ID = 202A©
The TO-220 package is universally preferred for all
automotive-commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220
contribute to its wide acceptance throughoutthe industry.
Absolute Maximum Ratings
TO-22OAB
Parameter Max. Units
In @ TC = 25°C
Continuous Drain Current, Ves @ 10V 202©
ID @ TC =100°C
Continuous Drain Current, Vas @ 10V
Pulsed Drain Current OD
Pro @TC = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy©
Avalanche Current
Repetitive Avalanche Energy©
See Fig.12a, 12b, 15, 16
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf-in (1 .1N-m)
Thermal Res
istance
Parameter
Typ. Max.
Junction-to-Case
- 0.45
Case-to-Sink, Flat, Greased Surface
0.50 -
Junction-to-Ambient
10/10/03
IRF1404
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.039 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 0.0035 0.004 Q Vss = 10V, ID = 121A co
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 76 - - S Vos = 25V, ID = 121A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, Vas = 0V
- - 250 VDS = 32V, Vas = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
% Total Gate Charge - 131 196 ID = 121A
Qgs Gate-to-Source Charge - 36 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 37 56 l/as = 10V@
td(on) Turn-On Delay Time - 17 - VDD = 20V
t, Rise Time - 190 - ns lo = 121A
thott) Turn-Off Delay Time - 46 - Rs = 2.552
tf Fall Time .- 33 - RD = 0.29 ©
u, Internal Drain Inductance - 4.5 - Between Isad, D
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7 5 - from package G '
' and center of die contact s
Ciss Input Capacitance - 5669 - Ves = 0V
Coss Output Capacitance - 1659 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 223 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6205 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 1467 - I/es = 0V, l/os = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 2249 - VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 202© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 808 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, ls = 121A, VGs = OV ©
trr Reverse Recovery Time - 78 117 ns TJ = 25°C, Ir: = 121A
Qrr Reverse RecoveryCharge - 163 245 nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting T J
Rs = 259,
G) ISDS121A,
Tus 175°C
= 25°C, L = 85yH
las-- 121A. (See Figure 12)
di/dt S 130A/ps, VDD S V(BH)DSS!
© Pulse width s 400ps; duty cycle s: 2%.
© Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% VDss
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
