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IRF1104IRN/a7320avai40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRF1104 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resista ..
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IRF1104
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 100 …D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 71 AD C GSI Pulsed Drain Current  400DMP @T = 25°C Power Dissipation 170 WD CLinear Derating Factor 1.11 W/°CV Gate-to-Source Voltage ± 20 VGSE Single Pulse Avalanche Energy‚ 350 mJASI Avalanche Current 60 AARE Repetitive Avalanche Energy 17 mJARdv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature Range°CSTGSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.90θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJA 14/24/98IRF1104
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