IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
IEER
Rectifier
PD-9.454D
IRCSBO
HEXFET® Power MOSFET
Dynamic dv/dt
..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO-220 HexSense
Parameter Max. Units
ID @ To = 25°C ..
IRC540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagehnternati
onal
TOR Rectifier
PD-9.592A
TlC540
HEXFET® Power MOSFET
q Dynamic dv/d ..
IRC630 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IRC634 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO4t20 HexSense
- _-_ Parameter Max. Units
19 @ Tc = ..
IRC644 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
TOR
Rectifier
PD-9.569A
IRC644
HEXFET® Power MOSFET
. Dynamic dv/dt ..
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IRC530
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
International
IEER
Rectifier
PD-9.454D
IRCSBO
HEXFET® Power MOSFET
Dynamic dv/dt
Repetitive Avalanche Rated
0
O
. Current Sense
.
175°C Operating Temperature
. Fast Switching
. Ease of Paralleling
. Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Rating
on-resistance and cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current
through the additional two leads to be used for control or protection of the
device. These devices exhibit similar electrical and thermal characteristics as
their lFtF-series equivalent part numbers. The provision of a kelvin source
connection effectively eliminates problems of common source inductance
when the HEXSense is used as a fast, high-current switch in non current-
sensing
