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IRAMS10UP60BIRN/a15avaiPlug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.
IRAMS10UP60BTOSN/a12avaiPlug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.
IRAMS10UP60BINTER N/a31avaiPlug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.


IRAMS10UP60B ,Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.Features• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monito ..
IRAMS10UP60B ,Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.Electrical Characteristics"P C PWM BUS-ITRIP 1Downloaded from: http://www.ic-pho ..
IRAMS10UP60B ,Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.applications such as washing machines and refrigerators. Plug N Drivetechnology offers an extremely ..
IRAMS10UP60B-3 ,Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.Features• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monito ..
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IRAMS10UP60B
Plug n Drive Integrated Power Module. Similar to IRAMS10UP60A with Internal Shunt Resistor.
Features• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monitor• Fully Isolated Package• Low V Non Punch Through IGBT TechnologyCE(on)• Undervoltage lockout for all channels• Matched propagation delay for all channels• Schmitt-triggered input logic• Cross-conduction prevention logic• Lower di/dt gate driver for better noise immunity• Motor Power range 0.4~0.75kW / 85~253 Vac• Isolation 2000V /1min and CTI > 600VRMS • Recognized by UL (E252584), RoHS CompliantAbsolute Maximum RatingsParameter Description Value UnitsV / V IGBT/Diode Blocking Voltage 600CES RRMV+V Positive Bus Input Voltage 450I @ T =25°CRMS Phase Current (Note 1) 10O CI @ T =100°C ARMS Phase Current (Note 1) 5O CI Pulsed RMS Phase Current (Note 2) 15OF PWM Carrier Frequency 20 kHzPWMP Power dissipation per IGBT @ T =25°C 27 WD CV VIsolation Voltage (1min) 2000ISO RMST (IGBT & Diodes)Operating Junction temperature Range -40 to +150J°CT (Driver IC)Operating Junction temperature Range -40 to +150JT Mounting torque Range (M3 screw) 0.5 to 1.0 Nm+Note 1: Sinusoidal Modulation at V =400V, T =150°C, F =20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.J PWMNote 2: t <100ms; T =25°C; F =20kHz. Limited by I , see Table "Inverter Section
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