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IR01HD214
250V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
Data Sheet No. PD-6.075-G
lnterryohtr.ial IR01H(D)214 / IR01H(D)2'14-P2
TOR Rectifier IR01H(D)224 I IR01H(D)224-P2
IR01H(D)420 I IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Features
Output Power MOSFETs in half-bridge configuration
. 500V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Undervoltage lockout
5V Schmitt-triggered input logic
Half-Bridge output in phase with HIN
. Heatsink version (P2) with improved PD
Description
The IR01H(D)xxx is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
half bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Typical Connection
ProductSummary
250V- 214/224
VIN (max) 500V - 420
tonloff 130 & 90 ns
tn 260 ns
RDS(on) 2.on - H214
1.19 - H224
3.on - H420
PD(TA = 25°C) 2.0W
4.0W - P2
Packages
'i'gtit,,a,
ttiii'))),
HV DC Bus
_ _ _ _ NOTE: D1 is not required for
I I D1 1 the HD type
Vcc I 1 I
I cc VB l
L” 2 H v
L IN a L V0 T
Fr, TO
IR01H(D)2't4 I IR01H(D)214-P2
IR01H(D)224 / IRty1H(D)224-P2
IR0'IH(D)420 I IR01H(D)420-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are dehned positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
VIN High Voltage Supply 214/224 -0.3 250
420 -O.3 500
VB High Side Floating Supply Absolute Voltage 214/224 -0.3 275
420 -o.3 525 V
VO Half-Bridge Output -0.3 VIN + 0.3
VIH/VIL Logic Input Voltage (HIN & LIN) - 0.3 Vcc + 0.3
Vcc Low Side and Logic Fixed Supply Voltage -0.3 25
dV/dt Peak Diode Recovery dv/dt - 3.50 V/ns
PD Package Power Dissipation @ TA 3 +25°C - 2 W
- P2 4.0
RTHJA Thermal Resistance, Junction to Ambient - 60
- P2 30 °C/W
RTHJC Thermal Resistance, Junction to Case (heatsink) - P2 - 20
TJ Junction Temperature -55 150
Ts Storage Temperature -55 150 oc
TL Lead Temperature (Soldering, 10 seconds) - 300
