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IPS041L
Intelligent Power Switch 1 Channel Low Side Driver in a SOT-223 Package
Data Sheet No.PD 60152-K
Internat onol
TOR Rectifier IPSO41 L
FULLY PROTECTED POWER MOSFET SWITCH
Features Product Summary
. Over temperature shutdown
. Over current shutdown
. Active clamp Rds(on) 500mn (max)
. Low current & logic level input
. E.S.D protection V clamp 50V
. . I 2A
Description shutdown
The IPSO41 L is a fully protected three terminal SMART Ton/Toe 1 .5rs
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET©
POWER MOSFET and a gate driver. It offers full Package
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C
or when the Drain current reaches 2A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
3 Lead SOT223
Typical Connection
R in series D
(if needed)
l IN control "
Logic signal
(Refer to leads assignments for correct pin configuration)
1
IPS041 L
Absolute Maximum Ratings
Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are
referenced to SOURCE lead. (T Ambient = 25°C unless otherwise specified). PCB mounting uses the standard footprint with 70 um
International
TOR Rectifier
copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
lin, max Maximum IN current -10 +10 mA
lsd cont. Diode max. continuous current (1)
(rth=125°C/W) - 1.2 A
lsd pulsed Diode max. pulsed current (1) - 3
Pd Maximum power dissipation“)
(rth=125oC/U/) - W
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=OQ, L=10VH
T stor. Max. storage temperature -55 150 0c
Tj max. Max.junction temperature -40 150 °C
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth1 Thermal resistance with standard footprint - 100 - °C/W
Rth2 Thermal resistance with l" square footprint - 60 -
Recommended Operating Conditions
These values are given tor a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage - 35
VIH High level input voltage 4 6 V
VIL Low level input voltage 0 0.5
Ids Continuous drain current
Tamb=85°c (TAmbient = 85°C, IN = 5V, rth = 100°CNV, Tj = 125°C) - 0.75 A
Rin Recommended resistor in series with IN pin 1 5 kn
Tr-in(max) Max recommended rise time for IN signal (see fig. 2) - 1 ws
Fr-lsc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
